Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond
The influence of surface topography on phase coherent transport in the two-dimensional (2D) hole band of surface transfer doped hydrogen-terminated (100) diamond is investigated. Low-temperature magneto-conductance measurements were carried out with an applied in-plane magnetic field to quantify the...
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Veröffentlicht in: | Diamond and related materials 2021-06, Vol.116, p.108377, Article 108377 |
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Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The influence of surface topography on phase coherent transport in the two-dimensional (2D) hole band of surface transfer doped hydrogen-terminated (100) diamond is investigated. Low-temperature magneto-conductance measurements were carried out with an applied in-plane magnetic field to quantify the effect of electronic micro-roughness on spin dephasing in the 2D hole band for Hall bar devices with similar transport characteristics, but significantly different topographic roughness. The electronic micro-roughness of the 2D hole band, described by the parameter d2L, where d is the root-mean-square (rms) fluctuation in the width of the quantum well and L is the correlation length of the fluctuations, is found to increase for surfaces with increased roughness. Fluctuations in the well width likely arise from a locally varying hole carrier density, arising for example from a local variation in the concentration of ionic components in the surface water layer.
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•Influence of surface topography on phase coherent transport in two-dimensional (2D) hole band of surface doped diamond.•Spin dephasing, observed through suppression of weak anti-localisation, is used to quantify the roughness of the 2D hole gas.•The electronic micro-roughness is found to increase with the physical roughness of the diamond surface. |
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ISSN: | 0925-9635 1879-0062 |
DOI: | 10.1016/j.diamond.2021.108377 |