Influences of silicon carbide nanowires’ addition on IMC growth behavior of pure Sn solder during solid–liquid diffusion

In this paper, various mass fractions (0, 0.2, 0.4, 0.6, 0.8, 1.0 wt%) of silicon carbide nanowires (SiC NWs) were incorporated into pure Sn solder to enhance the performances of Sn solder joint. The wetting behavior, shear strength, and intermetallic compound (IMC) growth mechanism of Sn– x SiC/Cu...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2021-07, Vol.32 (13), p.18067-18075
Hauptverfasser: Li, Mu-lan, Zhang, Liang, Jiang, Nan, Zhong, Su-juan, Zhang, Lei
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Sprache:eng
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Zusammenfassung:In this paper, various mass fractions (0, 0.2, 0.4, 0.6, 0.8, 1.0 wt%) of silicon carbide nanowires (SiC NWs) were incorporated into pure Sn solder to enhance the performances of Sn solder joint. The wetting behavior, shear strength, and intermetallic compound (IMC) growth mechanism of Sn– x SiC/Cu solder during solid–liquid diffusion at 250 °C were investigated systematically. The experimental results demonstrated that the wettability of Sn– x SiC/Cu solder had a significant improvement when the addition of SiC NWs was up to 0.6 wt%, and excessive additives would degrade the wettability of the composite solder. The formation of the Cu 6 Sn 5 IMC layer was observed at the Sn– x SiC solder/Cu interface. Meanwhile, SiC NWs as additives were conducive to restraining the growth of interfacial IMC during soldering process and the IMC thickness overtly fell down after doping 0.8 wt% SiC NWs into Sn solder. Moreover, SiC NW addition would contribute to enhancing the mechanical performance of Sn solder joint. The fracture mechanism of solder joint changed from a mix of brittle and ductile fracture to a characteristic of typical ductile fracture.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-021-06348-w