GaN nanorods on V-groove textured Si (111): significant light trapping for photoelectrocatalytic water splitting

Although gallium nitride (GaN) nanostructures are auspicious for photocatalytic activity, geometrical optimization has paid much attention for a significant light trapping in photoelectrochemical applications. To minimize the optical losses, we designed a prototype V-groove textured Si (100) with (1...

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Veröffentlicht in:Applied physics letters 2021-07, Vol.119 (2)
Hauptverfasser: Reddeppa, Maddaka, Thota, Chandrakalavathi, Nam, Dong-Jin, Woo, Hyeonseok, Kim, Song-Gang, Kim, Moon- Deock
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Sprache:eng
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Zusammenfassung:Although gallium nitride (GaN) nanostructures are auspicious for photocatalytic activity, geometrical optimization has paid much attention for a significant light trapping in photoelectrochemical applications. To minimize the optical losses, we designed a prototype V-groove textured Si (100) with (111) facets, and GaN nanorods (NRs) were grown over a prototype substrate using plasma-assisted molecular beam epitaxy. The photocurrent density of V-groove textured GaN NRs in the NaOH electrolyte is found to be 801.62 μA/cm2 at 1.14 V vs reversible hydrogen electrode, which was 2.1-fold larger than that of GaN NRs on plain Si (111). Using this prototype V-groove textured Si(100) with (111) facets, a significant light can be trapped and modulated into GaN NRs. Furthermore, the heterostructure between GaN NRs and V-groove textured Si stimulates effective charge separation and transportation. These results represent an important forward step in solar photoelectrolysis.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0055685