Effects of Stoichiometry on Structural, Morphological and Nanomechanical Properties of Bi2Se3 Thin Films Deposited on InP(111) Substrates by Pulsed Laser Deposition
In the present study, the structural, morphological, compositional, nanomechanical, and surface wetting properties of Bi2Se3 thin films prepared using a stoichiometric Bi2Se3 target and a Se-rich Bi2Se5 target are investigated. The Bi2Se3 films were grown on InP(111) substrates by using pulsed laser...
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| Veröffentlicht in: | Coatings (Basel) 2020-10, Vol.10 (10), p.958 |
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| creator | Hwang, Yeong-Maw Pan, Cheng-Tang Chen, Bo-Syun Le, Phuoc Huu Uyen, Ngo Ngoc Tuyen, Le Thi Cam Nguyen, Vanthan Luo, Chih-Wei Juang, Jenh-Yih Leu, Jihperng Jian, Sheng-Rui |
| description | In the present study, the structural, morphological, compositional, nanomechanical, and surface wetting properties of Bi2Se3 thin films prepared using a stoichiometric Bi2Se3 target and a Se-rich Bi2Se5 target are investigated. The Bi2Se3 films were grown on InP(111) substrates by using pulsed laser deposition. X-ray diffraction results revealed that all the as-grown thin films exhibited were highly c-axis-oriented Bi2Se3 phase with slight shift in diffraction angles, presumably due to slight stoichiometry changes. The energy dispersive X-ray spectroscopy analyses indicated that the Se-rich target gives rise to a nearly stoichiometric Bi2Se3 films, while the stoichiometric target only resulted in Se-deficient and Bi-rich films. Atomic force microscopy images showed that the films’ surfaces mainly consist of triangular pyramids with step-and-terrace structures with average roughness, Ra, being ~2.41 nm and ~1.65 nm for films grown with Bi2Se3 and Bi2Se5 targets, respectively. The hardness (Young’s modulus) of the Bi2Se3 thin films grown from the Bi2Se3 and Bi2Se5 targets were 5.4 GPa (110.2 GPa) and 10.3 GPa (186.5 GPa), respectively. The contact angle measurements of water droplets gave the results that the contact angle (surface energy) of the Bi2Se3 films obtained from the Bi2Se3 and Bi2Se5 targets were 80° (21.4 mJ/m2) and 110° (11.9 mJ/m2), respectively. |
| doi_str_mv | 10.3390/coatings10100958 |
| format | Article |
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The Bi2Se3 films were grown on InP(111) substrates by using pulsed laser deposition. X-ray diffraction results revealed that all the as-grown thin films exhibited were highly c-axis-oriented Bi2Se3 phase with slight shift in diffraction angles, presumably due to slight stoichiometry changes. The energy dispersive X-ray spectroscopy analyses indicated that the Se-rich target gives rise to a nearly stoichiometric Bi2Se3 films, while the stoichiometric target only resulted in Se-deficient and Bi-rich films. Atomic force microscopy images showed that the films’ surfaces mainly consist of triangular pyramids with step-and-terrace structures with average roughness, Ra, being ~2.41 nm and ~1.65 nm for films grown with Bi2Se3 and Bi2Se5 targets, respectively. The hardness (Young’s modulus) of the Bi2Se3 thin films grown from the Bi2Se3 and Bi2Se5 targets were 5.4 GPa (110.2 GPa) and 10.3 GPa (186.5 GPa), respectively. The contact angle measurements of water droplets gave the results that the contact angle (surface energy) of the Bi2Se3 films obtained from the Bi2Se3 and Bi2Se5 targets were 80° (21.4 mJ/m2) and 110° (11.9 mJ/m2), respectively.</description><identifier>ISSN: 2079-6412</identifier><identifier>EISSN: 2079-6412</identifier><identifier>DOI: 10.3390/coatings10100958</identifier><language>eng</language><publisher>Basel: MDPI AG</publisher><subject>Atomic force microscopy ; Contact angle ; Lasers ; Modulus of elasticity ; Molecular beam epitaxy ; Morphology ; Nanostructured materials ; Physical properties ; Pulsed laser deposition ; Pulsed lasers ; Pyramids ; Scanning electron microscopy ; Stoichiometry ; Substrates ; Surface energy ; Thin films ; Water drops ; Wetting</subject><ispartof>Coatings (Basel), 2020-10, Vol.10 (10), p.958</ispartof><rights>2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c243t-aa06a991e2450b77aa539ffd3eda4992e1959ba5890c6860396c948393e655a43</citedby><cites>FETCH-LOGICAL-c243t-aa06a991e2450b77aa539ffd3eda4992e1959ba5890c6860396c948393e655a43</cites><orcidid>0000-0003-4925-5832 ; 0000-0002-8654-9015 ; 0000-0003-1434-1829 ; 0000-0002-6453-7435 ; 0000-0001-8289-7808</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Hwang, Yeong-Maw</creatorcontrib><creatorcontrib>Pan, Cheng-Tang</creatorcontrib><creatorcontrib>Chen, Bo-Syun</creatorcontrib><creatorcontrib>Le, Phuoc Huu</creatorcontrib><creatorcontrib>Uyen, Ngo Ngoc</creatorcontrib><creatorcontrib>Tuyen, Le Thi Cam</creatorcontrib><creatorcontrib>Nguyen, Vanthan</creatorcontrib><creatorcontrib>Luo, Chih-Wei</creatorcontrib><creatorcontrib>Juang, Jenh-Yih</creatorcontrib><creatorcontrib>Leu, Jihperng</creatorcontrib><creatorcontrib>Jian, Sheng-Rui</creatorcontrib><title>Effects of Stoichiometry on Structural, Morphological and Nanomechanical Properties of Bi2Se3 Thin Films Deposited on InP(111) Substrates by Pulsed Laser Deposition</title><title>Coatings (Basel)</title><description>In the present study, the structural, morphological, compositional, nanomechanical, and surface wetting properties of Bi2Se3 thin films prepared using a stoichiometric Bi2Se3 target and a Se-rich Bi2Se5 target are investigated. The Bi2Se3 films were grown on InP(111) substrates by using pulsed laser deposition. X-ray diffraction results revealed that all the as-grown thin films exhibited were highly c-axis-oriented Bi2Se3 phase with slight shift in diffraction angles, presumably due to slight stoichiometry changes. The energy dispersive X-ray spectroscopy analyses indicated that the Se-rich target gives rise to a nearly stoichiometric Bi2Se3 films, while the stoichiometric target only resulted in Se-deficient and Bi-rich films. Atomic force microscopy images showed that the films’ surfaces mainly consist of triangular pyramids with step-and-terrace structures with average roughness, Ra, being ~2.41 nm and ~1.65 nm for films grown with Bi2Se3 and Bi2Se5 targets, respectively. The hardness (Young’s modulus) of the Bi2Se3 thin films grown from the Bi2Se3 and Bi2Se5 targets were 5.4 GPa (110.2 GPa) and 10.3 GPa (186.5 GPa), respectively. The contact angle measurements of water droplets gave the results that the contact angle (surface energy) of the Bi2Se3 films obtained from the Bi2Se3 and Bi2Se5 targets were 80° (21.4 mJ/m2) and 110° (11.9 mJ/m2), respectively.</description><subject>Atomic force microscopy</subject><subject>Contact angle</subject><subject>Lasers</subject><subject>Modulus of elasticity</subject><subject>Molecular beam epitaxy</subject><subject>Morphology</subject><subject>Nanostructured materials</subject><subject>Physical properties</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Pyramids</subject><subject>Scanning electron microscopy</subject><subject>Stoichiometry</subject><subject>Substrates</subject><subject>Surface energy</subject><subject>Thin films</subject><subject>Water drops</subject><subject>Wetting</subject><issn>2079-6412</issn><issn>2079-6412</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNpdkT9PwzAQxSMEElXpzmiJBSQCdpx_HqG0UKlApZY5ujhO4yq1g-0M_T58UNwWJMQtd3r3e--GC4JLgu8oZfiea3BSrS3BBGOW5CfBIMIZC9OYRKd_5vNgZO0G-2KE5oQNgq9JXQvuLNI1WjoteSP1VjizQ1p5wfTc9QbaW_SqTdfoVq8lhxaBqtAbKI_yBtRBWhjdCeOkOGQ9ymgpKFo1UqGpbLcWPYlOW-lEtU-eqcU1IeQGLfvSOgPOu8odWvSt9cAcrDC_BqnVRXBWg9-Mfvow-JhOVuOXcP7-PBs_zEMexdSFADgFxoiI4gSXWQaQUFbXFRUVxIxFgrCElZDkDPM0TzFlKWdxThkVaZJATIfB1TG3M_qzF9YVG90b5U8WUeJBmuU48hQ-Utxoa42oi87ILZhdQXCxf0fx_x30G9HdgEw</recordid><startdate>20201005</startdate><enddate>20201005</enddate><creator>Hwang, Yeong-Maw</creator><creator>Pan, Cheng-Tang</creator><creator>Chen, Bo-Syun</creator><creator>Le, Phuoc Huu</creator><creator>Uyen, Ngo Ngoc</creator><creator>Tuyen, Le Thi Cam</creator><creator>Nguyen, Vanthan</creator><creator>Luo, Chih-Wei</creator><creator>Juang, Jenh-Yih</creator><creator>Leu, Jihperng</creator><creator>Jian, Sheng-Rui</creator><general>MDPI AG</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><orcidid>https://orcid.org/0000-0003-4925-5832</orcidid><orcidid>https://orcid.org/0000-0002-8654-9015</orcidid><orcidid>https://orcid.org/0000-0003-1434-1829</orcidid><orcidid>https://orcid.org/0000-0002-6453-7435</orcidid><orcidid>https://orcid.org/0000-0001-8289-7808</orcidid></search><sort><creationdate>20201005</creationdate><title>Effects of Stoichiometry on Structural, Morphological and Nanomechanical Properties of Bi2Se3 Thin Films Deposited on InP(111) Substrates by Pulsed Laser Deposition</title><author>Hwang, Yeong-Maw ; Pan, Cheng-Tang ; Chen, Bo-Syun ; Le, Phuoc Huu ; Uyen, Ngo Ngoc ; Tuyen, Le Thi Cam ; Nguyen, Vanthan ; Luo, Chih-Wei ; Juang, Jenh-Yih ; Leu, Jihperng ; Jian, Sheng-Rui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c243t-aa06a991e2450b77aa539ffd3eda4992e1959ba5890c6860396c948393e655a43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Atomic force microscopy</topic><topic>Contact angle</topic><topic>Lasers</topic><topic>Modulus of elasticity</topic><topic>Molecular beam epitaxy</topic><topic>Morphology</topic><topic>Nanostructured materials</topic><topic>Physical properties</topic><topic>Pulsed laser deposition</topic><topic>Pulsed lasers</topic><topic>Pyramids</topic><topic>Scanning electron microscopy</topic><topic>Stoichiometry</topic><topic>Substrates</topic><topic>Surface energy</topic><topic>Thin films</topic><topic>Water drops</topic><topic>Wetting</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hwang, Yeong-Maw</creatorcontrib><creatorcontrib>Pan, Cheng-Tang</creatorcontrib><creatorcontrib>Chen, Bo-Syun</creatorcontrib><creatorcontrib>Le, Phuoc Huu</creatorcontrib><creatorcontrib>Uyen, Ngo Ngoc</creatorcontrib><creatorcontrib>Tuyen, Le Thi Cam</creatorcontrib><creatorcontrib>Nguyen, Vanthan</creatorcontrib><creatorcontrib>Luo, Chih-Wei</creatorcontrib><creatorcontrib>Juang, Jenh-Yih</creatorcontrib><creatorcontrib>Leu, Jihperng</creatorcontrib><creatorcontrib>Jian, Sheng-Rui</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>Coatings (Basel)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hwang, Yeong-Maw</au><au>Pan, Cheng-Tang</au><au>Chen, Bo-Syun</au><au>Le, Phuoc Huu</au><au>Uyen, Ngo Ngoc</au><au>Tuyen, Le Thi Cam</au><au>Nguyen, Vanthan</au><au>Luo, Chih-Wei</au><au>Juang, Jenh-Yih</au><au>Leu, Jihperng</au><au>Jian, Sheng-Rui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of Stoichiometry on Structural, Morphological and Nanomechanical Properties of Bi2Se3 Thin Films Deposited on InP(111) Substrates by Pulsed Laser Deposition</atitle><jtitle>Coatings (Basel)</jtitle><date>2020-10-05</date><risdate>2020</risdate><volume>10</volume><issue>10</issue><spage>958</spage><pages>958-</pages><issn>2079-6412</issn><eissn>2079-6412</eissn><abstract>In the present study, the structural, morphological, compositional, nanomechanical, and surface wetting properties of Bi2Se3 thin films prepared using a stoichiometric Bi2Se3 target and a Se-rich Bi2Se5 target are investigated. The Bi2Se3 films were grown on InP(111) substrates by using pulsed laser deposition. X-ray diffraction results revealed that all the as-grown thin films exhibited were highly c-axis-oriented Bi2Se3 phase with slight shift in diffraction angles, presumably due to slight stoichiometry changes. The energy dispersive X-ray spectroscopy analyses indicated that the Se-rich target gives rise to a nearly stoichiometric Bi2Se3 films, while the stoichiometric target only resulted in Se-deficient and Bi-rich films. Atomic force microscopy images showed that the films’ surfaces mainly consist of triangular pyramids with step-and-terrace structures with average roughness, Ra, being ~2.41 nm and ~1.65 nm for films grown with Bi2Se3 and Bi2Se5 targets, respectively. The hardness (Young’s modulus) of the Bi2Se3 thin films grown from the Bi2Se3 and Bi2Se5 targets were 5.4 GPa (110.2 GPa) and 10.3 GPa (186.5 GPa), respectively. The contact angle measurements of water droplets gave the results that the contact angle (surface energy) of the Bi2Se3 films obtained from the Bi2Se3 and Bi2Se5 targets were 80° (21.4 mJ/m2) and 110° (11.9 mJ/m2), respectively.</abstract><cop>Basel</cop><pub>MDPI AG</pub><doi>10.3390/coatings10100958</doi><orcidid>https://orcid.org/0000-0003-4925-5832</orcidid><orcidid>https://orcid.org/0000-0002-8654-9015</orcidid><orcidid>https://orcid.org/0000-0003-1434-1829</orcidid><orcidid>https://orcid.org/0000-0002-6453-7435</orcidid><orcidid>https://orcid.org/0000-0001-8289-7808</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Atomic force microscopy Contact angle Lasers Modulus of elasticity Molecular beam epitaxy Morphology Nanostructured materials Physical properties Pulsed laser deposition Pulsed lasers Pyramids Scanning electron microscopy Stoichiometry Substrates Surface energy Thin films Water drops Wetting |
| title | Effects of Stoichiometry on Structural, Morphological and Nanomechanical Properties of Bi2Se3 Thin Films Deposited on InP(111) Substrates by Pulsed Laser Deposition |
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