Laser-Induced Forward Transfer (LIFT) Technique as an Alternative for Assembly and Packaging of Electronic Components
Current trends in microelectronics chip bonding and assembly encompass ultra-fine pitch components with flexible form factors and advanced die-attach materials, which can sustain conformal strain without compromise in adhesion and reliability. These trends have highlighted the need for advanced micr...
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Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2021-11, Vol.27 (6), p.1-8 |
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Sprache: | eng |
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Zusammenfassung: | Current trends in microelectronics chip bonding and assembly encompass ultra-fine pitch components with flexible form factors and advanced die-attach materials, which can sustain conformal strain without compromise in adhesion and reliability. These trends have highlighted the need for advanced microfrabrication technologies, which allow the on-demand digital fabrication of interconnections and die-attach bumps on chip carriers and interposers with challenging topographies. Laser printing, based on the laser induced forward transfer (LIFT) technique, has addressed such micromanufacturing challenges over the past decade. Several previous demonstrations of highly resolved and conformal interconnections for the bonding and packaging of micro and opto-electronic components are summarized in this paper. Latest advances in the laser printing and laser sintering of highly viscous nanopastes for achieving planar or three-dimensional (3D) structures consisting of Ag paste are demonstrated. The latter is achieved by stacking of arrays or bumps in a digital manner. The reported results verify that LIFT offers control over both the lateral and vertical dimensions. This control can facilitate the soldering process of heterogeneous components, whose pads have significant height and pitch dissimilarities. The applicability of LIFT in the fields of packaging and assembly of flexible and heterogeneous integration schemes, is further validated. |
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ISSN: | 1077-260X 1558-4542 |
DOI: | 10.1109/JSTQE.2021.3084443 |