Nanoindentation of AlN, GaN, and AlGaN films grown by HVPE on SiC/Si hybrid substrates

Nanoindentation of AlN, GaN, and AlGaN films grown by HVPE on SiC/Si hybrid substrates

This paper presents an experimental study of structural and mechanical characteristics of thin films of AlN, GaN, and AlGaN grown on hybrid SiC/Si substrates by the method of HVPE. The surface roughness of the films and substrates has been measured. The thickness and molecular composition of the fil...

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Veröffentlicht in:Journal of physics. Conference series 2021-06, Vol.1954 (1), p.12009
Hauptverfasser: Grashchenko, A S, Kukushkin, S A, Osipov, A V, Sharofidinov, Sh Sh
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium nitrides
Aluminum nitride
Chemical composition
Elastic analysis
Elastic deformation
Ellipsometry
Gallium nitrides
Mechanical properties
Modulus of elasticity
Nanoindentation
Physics
Silicon substrates
Surface roughness
Thickness measurement
Thin films
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Beschreibung
Zusammenfassung:This paper presents an experimental study of structural and mechanical characteristics of thin films of AlN, GaN, and AlGaN grown on hybrid SiC/Si substrates by the method of HVPE. The surface roughness of the films and substrates has been measured. The thickness and molecular composition of the films have been determined by spectral ellipsometry. An analysis of elastic deformation occurring in the films as a result of indentation has been made. The values of hardness and Young’s modulus of the films have been calculated.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1954/1/012009