64‐2: ELQD Performance Modeling

An optimized top emitting (TE) electroluminescent quantum dot (ELQD) LED device design is achieved using Finite Difference Time Domain (FDTD) simulation by allowing the thicknesses for QD Emission layer (EML) and an adjacent hole transmission layer (HTL) layers to differ for R, G, and B subpixels. O...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:SID International Symposium Digest of technical papers 2021-05, Vol.52 (1), p.937-940
Hauptverfasser: Mlejnek, Michal, Han, Songfeng, Xun, May, Kanehiro, Masayuki, Nakanishi, Yohei, Koyama, Yoshitaka, Ishida, Takeshi
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 940
container_issue 1
container_start_page 937
container_title SID International Symposium Digest of technical papers
container_volume 52
creator Mlejnek, Michal
Han, Songfeng
Xun, May
Kanehiro, Masayuki
Nakanishi, Yohei
Koyama, Yoshitaka
Ishida, Takeshi
description An optimized top emitting (TE) electroluminescent quantum dot (ELQD) LED device design is achieved using Finite Difference Time Domain (FDTD) simulation by allowing the thicknesses for QD Emission layer (EML) and an adjacent hole transmission layer (HTL) layers to differ for R, G, and B subpixels. Optical extraction efficiencies for R, G, and B subpixels reach ∼15, ∼23, and ∼24 % resp., while small angular color shift is sustained. Angular characteristics of the device are very sensitive to the thickness variation of the individual material layers in the design, indicating the importance of thickness control in device fabrication process.
doi_str_mv 10.1002/sdtp.14842
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2545630489</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2545630489</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1052-d75f1af30599ebd8fde3048b82839f050e6f7dd0f4e55b1c4a050efd7fea2cff3</originalsourceid><addsrcrecordid>eNp9kM1Kw0AUhQdRMFY3PkHEnZB6ZzKTZNxJW38gYsUK7oZJZq60pEmcaZHufASf0ScxMa5dHbh89xz4CDmlMKYA7NKbTTumPONsjwSMJlkEVMh9EgDINJJJ8npIjrxfAcQx5zIgZwn__vxiV-Esf5qGc-uwcWtdlzZ8aIytlvXbMTlAXXl78pcj8nIzW0zuovzx9n5ynUclBcEikwqkGmMQUtrCZGhsDDwrMpbFEkGATTA1BpBbIQpact3f0KRoNSsR4xE5H3pb17xvrd-oVbN1dTepmOAi6dtkR10MVOka751F1brlWrudoqB6BapXoH4VdDAd4I9lZXf_kOp5upgPPz8eCl0-</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2545630489</pqid></control><display><type>article</type><title>64‐2: ELQD Performance Modeling</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Mlejnek, Michal ; Han, Songfeng ; Xun, May ; Kanehiro, Masayuki ; Nakanishi, Yohei ; Koyama, Yoshitaka ; Ishida, Takeshi</creator><creatorcontrib>Mlejnek, Michal ; Han, Songfeng ; Xun, May ; Kanehiro, Masayuki ; Nakanishi, Yohei ; Koyama, Yoshitaka ; Ishida, Takeshi</creatorcontrib><description>An optimized top emitting (TE) electroluminescent quantum dot (ELQD) LED device design is achieved using Finite Difference Time Domain (FDTD) simulation by allowing the thicknesses for QD Emission layer (EML) and an adjacent hole transmission layer (HTL) layers to differ for R, G, and B subpixels. Optical extraction efficiencies for R, G, and B subpixels reach ∼15, ∼23, and ∼24 % resp., while small angular color shift is sustained. Angular characteristics of the device are very sensitive to the thickness variation of the individual material layers in the design, indicating the importance of thickness control in device fabrication process.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.14842</identifier><language>eng</language><publisher>Campbell: Wiley Subscription Services, Inc</publisher><subject>Bottom emission ; Color shift ; Electroluminescence ; ELQD ; External quantum efficiency ; FDTD ; OLED ; Pixels ; QD-LED ; QDEL ; Quantum dots ; Simulation ; Stack ; Thickness ; Top emission</subject><ispartof>SID International Symposium Digest of technical papers, 2021-05, Vol.52 (1), p.937-940</ispartof><rights>2021 The Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c1052-d75f1af30599ebd8fde3048b82839f050e6f7dd0f4e55b1c4a050efd7fea2cff3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsdtp.14842$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsdtp.14842$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Mlejnek, Michal</creatorcontrib><creatorcontrib>Han, Songfeng</creatorcontrib><creatorcontrib>Xun, May</creatorcontrib><creatorcontrib>Kanehiro, Masayuki</creatorcontrib><creatorcontrib>Nakanishi, Yohei</creatorcontrib><creatorcontrib>Koyama, Yoshitaka</creatorcontrib><creatorcontrib>Ishida, Takeshi</creatorcontrib><title>64‐2: ELQD Performance Modeling</title><title>SID International Symposium Digest of technical papers</title><description>An optimized top emitting (TE) electroluminescent quantum dot (ELQD) LED device design is achieved using Finite Difference Time Domain (FDTD) simulation by allowing the thicknesses for QD Emission layer (EML) and an adjacent hole transmission layer (HTL) layers to differ for R, G, and B subpixels. Optical extraction efficiencies for R, G, and B subpixels reach ∼15, ∼23, and ∼24 % resp., while small angular color shift is sustained. Angular characteristics of the device are very sensitive to the thickness variation of the individual material layers in the design, indicating the importance of thickness control in device fabrication process.</description><subject>Bottom emission</subject><subject>Color shift</subject><subject>Electroluminescence</subject><subject>ELQD</subject><subject>External quantum efficiency</subject><subject>FDTD</subject><subject>OLED</subject><subject>Pixels</subject><subject>QD-LED</subject><subject>QDEL</subject><subject>Quantum dots</subject><subject>Simulation</subject><subject>Stack</subject><subject>Thickness</subject><subject>Top emission</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp9kM1Kw0AUhQdRMFY3PkHEnZB6ZzKTZNxJW38gYsUK7oZJZq60pEmcaZHufASf0ScxMa5dHbh89xz4CDmlMKYA7NKbTTumPONsjwSMJlkEVMh9EgDINJJJ8npIjrxfAcQx5zIgZwn__vxiV-Esf5qGc-uwcWtdlzZ8aIytlvXbMTlAXXl78pcj8nIzW0zuovzx9n5ynUclBcEikwqkGmMQUtrCZGhsDDwrMpbFEkGATTA1BpBbIQpact3f0KRoNSsR4xE5H3pb17xvrd-oVbN1dTepmOAi6dtkR10MVOka751F1brlWrudoqB6BapXoH4VdDAd4I9lZXf_kOp5upgPPz8eCl0-</recordid><startdate>202105</startdate><enddate>202105</enddate><creator>Mlejnek, Michal</creator><creator>Han, Songfeng</creator><creator>Xun, May</creator><creator>Kanehiro, Masayuki</creator><creator>Nakanishi, Yohei</creator><creator>Koyama, Yoshitaka</creator><creator>Ishida, Takeshi</creator><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>202105</creationdate><title>64‐2: ELQD Performance Modeling</title><author>Mlejnek, Michal ; Han, Songfeng ; Xun, May ; Kanehiro, Masayuki ; Nakanishi, Yohei ; Koyama, Yoshitaka ; Ishida, Takeshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1052-d75f1af30599ebd8fde3048b82839f050e6f7dd0f4e55b1c4a050efd7fea2cff3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Bottom emission</topic><topic>Color shift</topic><topic>Electroluminescence</topic><topic>ELQD</topic><topic>External quantum efficiency</topic><topic>FDTD</topic><topic>OLED</topic><topic>Pixels</topic><topic>QD-LED</topic><topic>QDEL</topic><topic>Quantum dots</topic><topic>Simulation</topic><topic>Stack</topic><topic>Thickness</topic><topic>Top emission</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mlejnek, Michal</creatorcontrib><creatorcontrib>Han, Songfeng</creatorcontrib><creatorcontrib>Xun, May</creatorcontrib><creatorcontrib>Kanehiro, Masayuki</creatorcontrib><creatorcontrib>Nakanishi, Yohei</creatorcontrib><creatorcontrib>Koyama, Yoshitaka</creatorcontrib><creatorcontrib>Ishida, Takeshi</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mlejnek, Michal</au><au>Han, Songfeng</au><au>Xun, May</au><au>Kanehiro, Masayuki</au><au>Nakanishi, Yohei</au><au>Koyama, Yoshitaka</au><au>Ishida, Takeshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>64‐2: ELQD Performance Modeling</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2021-05</date><risdate>2021</risdate><volume>52</volume><issue>1</issue><spage>937</spage><epage>940</epage><pages>937-940</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>An optimized top emitting (TE) electroluminescent quantum dot (ELQD) LED device design is achieved using Finite Difference Time Domain (FDTD) simulation by allowing the thicknesses for QD Emission layer (EML) and an adjacent hole transmission layer (HTL) layers to differ for R, G, and B subpixels. Optical extraction efficiencies for R, G, and B subpixels reach ∼15, ∼23, and ∼24 % resp., while small angular color shift is sustained. Angular characteristics of the device are very sensitive to the thickness variation of the individual material layers in the design, indicating the importance of thickness control in device fabrication process.</abstract><cop>Campbell</cop><pub>Wiley Subscription Services, Inc</pub><doi>10.1002/sdtp.14842</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0097-966X
ispartof SID International Symposium Digest of technical papers, 2021-05, Vol.52 (1), p.937-940
issn 0097-966X
2168-0159
language eng
recordid cdi_proquest_journals_2545630489
source Wiley Online Library Journals Frontfile Complete
subjects Bottom emission
Color shift
Electroluminescence
ELQD
External quantum efficiency
FDTD
OLED
Pixels
QD-LED
QDEL
Quantum dots
Simulation
Stack
Thickness
Top emission
title 64‐2: ELQD Performance Modeling
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T00%3A58%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=64%E2%80%902:%20ELQD%20Performance%20Modeling&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Mlejnek,%20Michal&rft.date=2021-05&rft.volume=52&rft.issue=1&rft.spage=937&rft.epage=940&rft.pages=937-940&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1002/sdtp.14842&rft_dat=%3Cproquest_cross%3E2545630489%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2545630489&rft_id=info:pmid/&rfr_iscdi=true