64‐2: ELQD Performance Modeling

64‐2: ELQD Performance Modeling

An optimized top emitting (TE) electroluminescent quantum dot (ELQD) LED device design is achieved using Finite Difference Time Domain (FDTD) simulation by allowing the thicknesses for QD Emission layer (EML) and an adjacent hole transmission layer (HTL) layers to differ for R, G, and B subpixels. O...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2021-05, Vol.52 (1), p.937-940
Hauptverfasser: Mlejnek, Michal, Han, Songfeng, Xun, May, Kanehiro, Masayuki, Nakanishi, Yohei, Koyama, Yoshitaka, Ishida, Takeshi
Format: Artikel
Sprache:eng
Schlagworte:
Bottom emission
Color shift
Electroluminescence
ELQD
External quantum efficiency
FDTD
OLED
Pixels
QD-LED
QDEL
Quantum dots
Simulation
Stack
Thickness
Top emission
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Beschreibung
Zusammenfassung:An optimized top emitting (TE) electroluminescent quantum dot (ELQD) LED device design is achieved using Finite Difference Time Domain (FDTD) simulation by allowing the thicknesses for QD Emission layer (EML) and an adjacent hole transmission layer (HTL) layers to differ for R, G, and B subpixels. Optical extraction efficiencies for R, G, and B subpixels reach ∼15, ∼23, and ∼24 % resp., while small angular color shift is sustained. Angular characteristics of the device are very sensitive to the thickness variation of the individual material layers in the design, indicating the importance of thickness control in device fabrication process.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.14842