P‐16: Turnaround Phenomenon of Threshold Voltage Shifts in Bias‐Stressed a‐Si:H Thin‐Film Transistor under Extremely High Intensity Illumination

The abnormal threshold voltage (Vth) turnaround behavior of a‐Si:H TFTs was investigated when biased under extremely high intensity illumination. TFTs with various compositions of gate insulator (SiNx) were fabricated to avoid this abnormal behavior and enhance reliability upon high intensity illumi...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2021-05, Vol.52 (1), p.1112-1115
Hauptverfasser:	liu, Chunming, Jiang, Zhixiong, Xu, Hongyuan, Son, Woosung, Wang, Xu
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous silicon electron traps high intensity illumination Illumination Optimization Reliability Semiconductor devices thin film transistor Thin film transistors Threshold voltage Vth
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Beschreibung
Zusammenfassung:	The abnormal threshold voltage (Vth) turnaround behavior of a‐Si:H TFTs was investigated when biased under extremely high intensity illumination. TFTs with various compositions of gate insulator (SiNx) were fabricated to avoid this abnormal behavior and enhance reliability upon high intensity illumination. 500‐hours RA results confirmed that our optimization strategy can effectively improve the reliability of TFT‐LCDs.
ISSN:	0097-966X 2168-0159
DOI:	10.1002/sdtp.14888