P‐9: Understanding Diffusion Behaviors of Light Elements in OLEDs

In the OLED panel, we have been investigated to understand diffusion behaviors of light element in various perspectives. It has evaluated by using advanced analytical tools such nano‐SIMS. we could find the diffused hydrogen from insulating film in channel area of bad sample. Increased hydrogen is d...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2021-05, Vol.52 (1), p.1088-1090
Hauptverfasser:	HAN, Jae Bum, Park, Young-Gil, Jeong, Soo Im, Ahn, Nari
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous oxide thin-film transistors Diffusion Hydrogen diffusion Light elements Moisture diffusion Nano-scale SIMS organic light-emitting diode Outgassing
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	In the OLED panel, we have been investigated to understand diffusion behaviors of light element in various perspectives. It has evaluated by using advanced analytical tools such nano‐SIMS. we could find the diffused hydrogen from insulating film in channel area of bad sample. Increased hydrogen is directly attributed to the negative Vth shift. Also, we make the cross sectional sample and find the diffusion source of internal outgassing using the cross‐sectional Ion Mapping analysis method.
ISSN:	0097-966X 2168-0159
DOI:	10.1002/sdtp.14882