Highly efficient and stable planar perovskite solar cells with K3[Fe(CN)6]-doped spiro-OMeTAD

Spiro-OMeTAD has been widely employed as one of the most frequently used hole transport materials (HTMs) for high-performance perovskite solar cells (PSCs). Nevertheless, raw spiro-OMeTAD suffers from inferior electronic properties. To date, doping has been considered to be a promising strategy to a...

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Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2021-06, Vol.9 (24), p.7726-7733
Hauptverfasser: Sun, Weihai, Zhang, Mingjing, Wang, Shibo, Cao, Fengxian, Zou, Jinjun, Du, Yitian, Zhang, Lan, Wu, Jihuai
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Sprache:eng
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Zusammenfassung:Spiro-OMeTAD has been widely employed as one of the most frequently used hole transport materials (HTMs) for high-performance perovskite solar cells (PSCs). Nevertheless, raw spiro-OMeTAD suffers from inferior electronic properties. To date, doping has been considered to be a promising strategy to address this dilemma. In this work, we successfully introduce K3[Fe(CN)6], a cheap and effective inorganic oxidant, into spiro-OMeTAD together with lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI) and 4-tert-butylpyridine (tBP) for highly efficient PSCs. The addition of the dopant K3[Fe(CN)6] could not only promote the oxidation of spiro-OMeTAD to generate a higher hole density, but also adjust its highest occupied molecular orbital (HOMO) to pursue an appropriate energy level alignment with the perovskite active layer, resulting in a high conductivity and hole extraction ability of spiro-OMeTAD. As a consequence, the PSC incorporated with K3[Fe(CN)6] achieves a champion efficiency of 20.84%, which is higher than that of the undoped device (18.09%). Furthermore, the K3[Fe(CN)6]-doped devices demonstrate an enhanced reproducibility and alleviated hysteresis. Our results indicate that K3[Fe(CN)6] is an efficient and facile dopant of spiro-OMeTAD for highly efficient and stable PSCs.
ISSN:2050-7526
2050-7534
DOI:10.1039/d1tc01284c