Material and device characterization of InGaP solar cells grown on GaAs misoriented substrates by metal-organic chemical vapor deposition

[Display omitted] •Zn- and Si-doped In0.48Ga0.52P structures are grown on (001) GaAs misoriented substrates.•Zn and Si doping concentrations in InGaP are increased with increasing substrate misorientation angle.•Lattice constant of InGaP is decreased with substrate misorientation angle due to reduced CuPt-type ordering.•Higher open-circuit voltage of InGaP solar cell is obtained by increasing substrate misorientation angle. We grew and characterized Zn- and Si-doped In0.48Ga0.52P grown on (001) GaAs substrates misoriented by θS = 0°, 2°, 6°, and 10° toward (111)A using metal-organic chemical vapor deposition. The dopant incorporation efficiency is improved with higher θS because of a larger surface free energy. The lattice constant of InGaP is increased with higher doping concentration, whereas it is decreased with higher θS as a result of reduced CuPt-type ordering in InGaP. This reduced ordering with θS from 0° to 10° is supported by a bandgap increase of ~60 meV. The open-circuit voltage of InGaP solar cell with θS = 10° is more than 100 meV higher than that with θS = 2° due to the increased bandgap and the decrease of the ordering-related defects. Besides, a larger CuPt-type ordering results in a greater reduction of the thermal activation energy of InGaP solar cell.