Fabrication of Sn doped MoO3 photoelectric film via solid-state reaction combining with thermal evaporation deposition

[Display omitted] •Sn-MoO3 film was prepared via the solid-state reaction with thermal deposition.•A feasible way for fabrication of doped metal oxide films is provided.•The photoresponse range of Sn doped MoO3 thin film can be extended to 1550 nm. Sn doped MoO3 thin film was prepared via combining the solid-state reaction between Sn2+ and MoO3 with thermal deposition technology. Sn doped MoO3 powder was obtained by simply grinding powders containing SnCl2 and MoO3. This process is a pure solid-state reaction, which is simple, safe and highly efficient. Furthermore, the thermal deposition technology was used to realize the controllable fabrication of uniform broadband absorption films. It’s demonstrated that the photoresponse range of Sn doped MoO3 thin film can be extended to 1550 nm, indicating its potential for broadband photodetection.