Expression of concern:Properties of Mg doped GaAs grown by molecular beam epitaxy, Jong Su Kim, I.H. Bae, J.Y. Leem, S.K. Noh, J.I. Lee, J.S. Kim, S.M. Kim, J.S. Son, Minhyon Jeon, J. Crystal Growth. vol. 226, pp. 52–56, 2001

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2021-04, Vol.560-561, p.126038, Article 126038
1. Verfasser:	Derby, Jeffrey J.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page	126038
container_title	Journal of crystal growth
container_volume	560-561
creator	Derby, Jeffrey J.
description
doi_str_mv	10.1016/j.jcrysgro.2021.126038
format	Article
fullrecord	<record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2539560198</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0022024821000142</els_id><sourcerecordid>2539560198</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1808-53defe6a9a775630f9612fc8941b94783f6926b3b6a058eaad9b92083fb30f983</originalsourceid><addsrcrecordid>eNqFkc-O0zAQxiMEEmXhFdBIXFuv7TRuwomlWrrttoAUOHCynGTSOkrjrJ0um9u-A28IL4LTLGcu9sxP880ffUHwllHCKBOXFaly27u9NYRTzgjjgobxs2DC4kU4iyjlz4OJf_mM8nn8MnjlXEWpVzI6Cf5cP7QWndOmAVNCbpocbfP-qzUt2k6jG-huD4XPC1ipKwd-0M8Gsh6Opsb8VCsLGaojYKs79dBPYWOaPaQnuNXHKazJDYGPCj0mPwhsET1MyS2Bz-YwwPUZDlFKRklKdk_RmaWmmcJON4fe77jBIdsQWPqTO1XDym_THQjcm5oA52IKbUsg4r8ff0U-4f7Q18GLUtUO3zz9F8H3T9ffljez7ZfVenm1neUspvEsCgssUahELRaRCGmZCMbLPE7mLEvmizgsRcJFFmZC0ShGpYokSzj1PBuK4_AieDf2ba25O6HrZGVOtvEjJY_CJBKUnavEWJVb45zFUrZWH5XtJaNyMFRW8p-hcjBUjoZ64YdRiP6Ge41Wulyj96vQFvNOFkb_r8VfBYulSw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2539560198</pqid></control><display><type>article</type><title>Expression of concern:Properties of Mg doped GaAs grown by molecular beam epitaxy, Jong Su Kim, I.H. Bae, J.Y. Leem, S.K. Noh, J.I. Lee, J.S. Kim, S.M. Kim, J.S. Son, Minhyon Jeon, J. Crystal Growth. vol. 226, pp. 52–56, 2001</title><source>Elsevier ScienceDirect Journals</source><creator>Derby, Jeffrey J.</creator><contributor>Derby, Jeffrey J.</contributor><creatorcontrib>Derby, Jeffrey J. ; Derby, Jeffrey J.</creatorcontrib><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2021.126038</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><ispartof>Journal of crystal growth, 2021-04, Vol.560-561, p.126038, Article 126038</ispartof><rights>2021</rights><rights>Copyright Elsevier BV Apr 15, 2021</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024821000142$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><contributor>Derby, Jeffrey J.</contributor><creatorcontrib>Derby, Jeffrey J.</creatorcontrib><title>Expression of concern:Properties of Mg doped GaAs grown by molecular beam epitaxy, Jong Su Kim, I.H. Bae, J.Y. Leem, S.K. Noh, J.I. Lee, J.S. Kim, S.M. Kim, J.S. Son, Minhyon Jeon, J. Crystal Growth. vol. 226, pp. 52–56, 2001</title><title>Journal of crystal growth</title><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqFkc-O0zAQxiMEEmXhFdBIXFuv7TRuwomlWrrttoAUOHCynGTSOkrjrJ0um9u-A28IL4LTLGcu9sxP880ffUHwllHCKBOXFaly27u9NYRTzgjjgobxs2DC4kU4iyjlz4OJf_mM8nn8MnjlXEWpVzI6Cf5cP7QWndOmAVNCbpocbfP-qzUt2k6jG-huD4XPC1ipKwd-0M8Gsh6Opsb8VCsLGaojYKs79dBPYWOaPaQnuNXHKazJDYGPCj0mPwhsET1MyS2Bz-YwwPUZDlFKRklKdk_RmaWmmcJON4fe77jBIdsQWPqTO1XDym_THQjcm5oA52IKbUsg4r8ff0U-4f7Q18GLUtUO3zz9F8H3T9ffljez7ZfVenm1neUspvEsCgssUahELRaRCGmZCMbLPE7mLEvmizgsRcJFFmZC0ShGpYokSzj1PBuK4_AieDf2ba25O6HrZGVOtvEjJY_CJBKUnavEWJVb45zFUrZWH5XtJaNyMFRW8p-hcjBUjoZ64YdRiP6Ge41Wulyj96vQFvNOFkb_r8VfBYulSw</recordid><startdate>20210415</startdate><enddate>20210415</enddate><creator>Derby, Jeffrey J.</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20210415</creationdate><title>Expression of concern:Properties of Mg doped GaAs grown by molecular beam epitaxy, Jong Su Kim, I.H. Bae, J.Y. Leem, S.K. Noh, J.I. Lee, J.S. Kim, S.M. Kim, J.S. Son, Minhyon Jeon, J. Crystal Growth. vol. 226, pp. 52–56, 2001</title><author>Derby, Jeffrey J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1808-53defe6a9a775630f9612fc8941b94783f6926b3b6a058eaad9b92083fb30f983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Derby, Jeffrey J.</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Derby, Jeffrey J.</au><au>Derby, Jeffrey J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Expression of concern:Properties of Mg doped GaAs grown by molecular beam epitaxy, Jong Su Kim, I.H. Bae, J.Y. Leem, S.K. Noh, J.I. Lee, J.S. Kim, S.M. Kim, J.S. Son, Minhyon Jeon, J. Crystal Growth. vol. 226, pp. 52–56, 2001</atitle><jtitle>Journal of crystal growth</jtitle><date>2021-04-15</date><risdate>2021</risdate><volume>560-561</volume><spage>126038</spage><pages>126038-</pages><artnum>126038</artnum><issn>0022-0248</issn><eissn>1873-5002</eissn><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2021.126038</doi><oa>free_for_read</oa></addata></record>
fulltext	fulltext
identifier	ISSN: 0022-0248
ispartof	Journal of crystal growth, 2021-04, Vol.560-561, p.126038, Article 126038
issn	0022-0248 1873-5002
language	eng
recordid	cdi_proquest_journals_2539560198
source	Elsevier ScienceDirect Journals
title	Expression of concern:Properties of Mg doped GaAs grown by molecular beam epitaxy, Jong Su Kim, I.H. Bae, J.Y. Leem, S.K. Noh, J.I. Lee, J.S. Kim, S.M. Kim, J.S. Son, Minhyon Jeon, J. Crystal Growth. vol. 226, pp. 52–56, 2001
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-08T02%3A12%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Expression%20of%20concern:Properties%20of%20Mg%20doped%20GaAs%20grown%20by%20molecular%20beam%20epitaxy,%20Jong%20Su%20Kim,%20I.H.%20Bae,%20J.Y.%20Leem,%20S.K.%20Noh,%20J.I.%20Lee,%20J.S.%20Kim,%20S.M.%20Kim,%20J.S.%20Son,%20Minhyon%20Jeon,%20J.%20Crystal%20Growth.%20vol.%20226,%20pp.%2052%E2%80%9356,%202001&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Derby,%20Jeffrey%20J.&rft.date=2021-04-15&rft.volume=560-561&rft.spage=126038&rft.pages=126038-&rft.artnum=126038&rft.issn=0022-0248&rft.eissn=1873-5002&rft_id=info:doi/10.1016/j.jcrysgro.2021.126038&rft_dat=%3Cproquest_cross%3E2539560198%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2539560198&rft_id=info:pmid/&rft_els_id=S0022024821000142&rfr_iscdi=true