Dispersants for silicon carbide in water—A comparative study

The present work describes a comparative study on a pool of 12 dispersants for the de‐agglomeration and stabilization of silicon carbide in aqueous suspensions with solids loading relevant for dip coating applications. As silicon carbide slurries may include sintering aids, different functional grou...

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Veröffentlicht in:International journal of applied ceramic technology 2021-07, Vol.18 (4), p.1164-1173
Hauptverfasser: Foghmoes, Søren, Jørgensen, Jan Hoffmann, Agersted, Karsten, Nielsen, Marianne, Della Negra, Michela
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Sprache:eng
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Zusammenfassung:The present work describes a comparative study on a pool of 12 dispersants for the de‐agglomeration and stabilization of silicon carbide in aqueous suspensions with solids loading relevant for dip coating applications. As silicon carbide slurries may include sintering aids, different functional groups, molecular weight, and stabilization mechanisms were considered for the dispersants to be able to stabilize both slurry components. Additionally, pH effect, toxicity, additive compatibility, and foaming properties were considered, giving all the necessary information for developing new aqueous formulation of SiC suspensions, including advantages and disadvantages of the different candidates. Different de‐agglomeration procedures, powder surface area, and calcination temperature were also considered to study the effect of the SiC surface properties. The outcome is that slurry stabilization provided by an alkaline environment at pH larger than 8‒9 is significantly more effective than slurry stabilization by any of the tested dispersants. Alkaline environments facilitate a negative surface charge on SiC particles and provide a stable electrostatic stabilization mechanism not observed in neutral or acidic environments. One among the dispersant candidates (FA 4404) seems to broaden slightly the range of stability toward the acidic regime. Anionic surfactants or block co‐polymers tested exhibited no significant interaction with the SiC particles.
ISSN:1546-542X
1744-7402
DOI:10.1111/ijac.13772