Research on the ability of over current in Ti/NbOx/Pt-based selector

In this work, the devices of Ti/NbO x /Pt with and without annealing process were prepared by magnetron sputtering method, which exhibited threshold switching characteristics as selector caused by insulator–metal transition (IMT) effect. The threshold switching characteristics of normal device (ND)...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of materials science. Materials in electronics 2021-05, Vol.32 (10), p.12822-12827
Hauptverfasser:	Liu, Chunlei, Ma, Guokun, Chen, Ao, Zhao, Xiaohu, Zhou, Chujie, Wang, Hao
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Characterization and Evaluation of Materials Chemistry and Materials Science Crystal structure Electrodes Investigations Magnetron sputtering Materials Science Memory devices Optical and Electronic Materials Phase transitions Random access memory Spectrum analysis Switching Thin films Titanium
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	In this work, the devices of Ti/NbO x /Pt with and without annealing process were prepared by magnetron sputtering method, which exhibited threshold switching characteristics as selector caused by insulator–metal transition (IMT) effect. The threshold switching characteristics of normal device (ND) and annealed device (AD) under large compliance current (CC) were comprehensively investigated. AD had better stability and resistance consistency of OFF state than that of ND. Pulse test further demonstrated that the AD displayed excellent performance after applying over current. Generally, AD has a greater potential to avoid sneak path current for high-density memory device.
ISSN:	0957-4522 1573-482X
DOI:	10.1007/s10854-020-03670-7