A transient ionizing radiation SPICE model for PDSOI MOSFET

In this paper, a transient ionizing radiation SPICE model for PDSOI MOSFET is proposed for the simulation of the rail‐span collapse. It is based on the present understanding of transient ionizing radiation effects. The model accounts for the generation and collection of radiation induced transient p...

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Veröffentlicht in:	Microwave and optical technology letters 2021-08, Vol.63 (8), p.2103-2107
Hauptverfasser:	Gao, Libo, Du, Chuanhua, Bu, Jianhui, Li, Jiangjiang, Ma, Quangang, Zhao, Fazhan, Zeng, Chao, Gao, Jiantou, Li, Duoli, Zeng, Chuanbin, Han, Zhengsheng, Luo, Jiajun
Format:	Artikel
Sprache:	eng
Schlagworte:	Current sources Dosage Ionizing radiation MOSFETs PDSOI photocurrent Photoelectric effect Photoelectric emission Radiation Radiation effects Simulation SPICE model Transient current transient ionizing radiation
Online-Zugang:	Volltext
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