A transient ionizing radiation SPICE model for PDSOI MOSFET

In this paper, a transient ionizing radiation SPICE model for PDSOI MOSFET is proposed for the simulation of the rail‐span collapse. It is based on the present understanding of transient ionizing radiation effects. The model accounts for the generation and collection of radiation induced transient photocurrent, the influence of the device geometry, and the bias conditions. Verilog‐A behavioral modeling language is utilized to implement the physically based models of the transient current sources, eliminating the use of independent current sources and lumped SPICE element models. The model is validated by comparison with the Sentaurus TCAD simulation results. The comparison of simulation and experimental results of the 64K SRAM fabricated by the 0.13 μm PDSOI technology validates the effectiveness of the dose rate model.