A transient ionizing radiation SPICE model for PDSOI MOSFET
In this paper, a transient ionizing radiation SPICE model for PDSOI MOSFET is proposed for the simulation of the rail‐span collapse. It is based on the present understanding of transient ionizing radiation effects. The model accounts for the generation and collection of radiation induced transient p...
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| Veröffentlicht in: | Microwave and optical technology letters 2021-08, Vol.63 (8), p.2103-2107 |
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| container_title | Microwave and optical technology letters |
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| creator | Gao, Libo Du, Chuanhua Bu, Jianhui Li, Jiangjiang Ma, Quangang Zhao, Fazhan Zeng, Chao Gao, Jiantou Li, Duoli Zeng, Chuanbin Han, Zhengsheng Luo, Jiajun |
| description | In this paper, a transient ionizing radiation SPICE model for PDSOI MOSFET is proposed for the simulation of the rail‐span collapse. It is based on the present understanding of transient ionizing radiation effects. The model accounts for the generation and collection of radiation induced transient photocurrent, the influence of the device geometry, and the bias conditions. Verilog‐A behavioral modeling language is utilized to implement the physically based models of the transient current sources, eliminating the use of independent current sources and lumped SPICE element models. The model is validated by comparison with the Sentaurus TCAD simulation results. The comparison of simulation and experimental results of the 64K SRAM fabricated by the 0.13 μm PDSOI technology validates the effectiveness of the dose rate model. |
| doi_str_mv | 10.1002/mop.32317 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2534559131</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2534559131</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2977-5bf76c5f33b819abcfc719dc9052520fae528b522b4e19986906e5a4a54862de3</originalsourceid><addsrcrecordid>eNp1kEFLwzAUx4MoOKcHv0HAk4duyUvTNHgac-pgo4PpOaRtIhlbU5MOmZ_ear16erzH7_3_8EPolpIJJQSmB99OGDAqztCIEpknIDJyjkYklzyBVIhLdBXjjhDChIARepjhLugmOtN02PnGfbnmHQddO931K95ulvMFPvja7LH1AW8et8USr4vt0-L1Gl1YvY_m5m-O0Vt_nb8kq-J5OZ-tkgqkEAkvrcgqbhkrcyp1WdlKUFlXknDgQKw2HPKSA5SpoVLmmSSZ4TrVPM0zqA0bo7shtw3-42hip3b-GJq-UgFnKeeSMtpT9wNVBR9jMFa1wR10OClK1I8b1btRv256djqwn25vTv-Dal1sho9vPtFipw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2534559131</pqid></control><display><type>article</type><title>A transient ionizing radiation SPICE model for PDSOI MOSFET</title><source>Wiley Journals</source><creator>Gao, Libo ; Du, Chuanhua ; Bu, Jianhui ; Li, Jiangjiang ; Ma, Quangang ; Zhao, Fazhan ; Zeng, Chao ; Gao, Jiantou ; Li, Duoli ; Zeng, Chuanbin ; Han, Zhengsheng ; Luo, Jiajun</creator><creatorcontrib>Gao, Libo ; Du, Chuanhua ; Bu, Jianhui ; Li, Jiangjiang ; Ma, Quangang ; Zhao, Fazhan ; Zeng, Chao ; Gao, Jiantou ; Li, Duoli ; Zeng, Chuanbin ; Han, Zhengsheng ; Luo, Jiajun</creatorcontrib><description>In this paper, a transient ionizing radiation SPICE model for PDSOI MOSFET is proposed for the simulation of the rail‐span collapse. It is based on the present understanding of transient ionizing radiation effects. The model accounts for the generation and collection of radiation induced transient photocurrent, the influence of the device geometry, and the bias conditions. Verilog‐A behavioral modeling language is utilized to implement the physically based models of the transient current sources, eliminating the use of independent current sources and lumped SPICE element models. The model is validated by comparison with the Sentaurus TCAD simulation results. The comparison of simulation and experimental results of the 64K SRAM fabricated by the 0.13 μm PDSOI technology validates the effectiveness of the dose rate model.</description><identifier>ISSN: 0895-2477</identifier><identifier>EISSN: 1098-2760</identifier><identifier>DOI: 10.1002/mop.32317</identifier><language>eng</language><publisher>Hoboken, USA: John Wiley & Sons, Inc</publisher><subject>Current sources ; Dosage ; Ionizing radiation ; MOSFETs ; PDSOI ; photocurrent ; Photoelectric effect ; Photoelectric emission ; Radiation ; Radiation effects ; Simulation ; SPICE model ; Transient current ; transient ionizing radiation</subject><ispartof>Microwave and optical technology letters, 2021-08, Vol.63 (8), p.2103-2107</ispartof><rights>2020 Wiley Periodicals, Inc.</rights><rights>2021 Wiley Periodicals LLC.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2977-5bf76c5f33b819abcfc719dc9052520fae528b522b4e19986906e5a4a54862de3</citedby><cites>FETCH-LOGICAL-c2977-5bf76c5f33b819abcfc719dc9052520fae528b522b4e19986906e5a4a54862de3</cites><orcidid>0000-0002-5059-624X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fmop.32317$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fmop.32317$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Gao, Libo</creatorcontrib><creatorcontrib>Du, Chuanhua</creatorcontrib><creatorcontrib>Bu, Jianhui</creatorcontrib><creatorcontrib>Li, Jiangjiang</creatorcontrib><creatorcontrib>Ma, Quangang</creatorcontrib><creatorcontrib>Zhao, Fazhan</creatorcontrib><creatorcontrib>Zeng, Chao</creatorcontrib><creatorcontrib>Gao, Jiantou</creatorcontrib><creatorcontrib>Li, Duoli</creatorcontrib><creatorcontrib>Zeng, Chuanbin</creatorcontrib><creatorcontrib>Han, Zhengsheng</creatorcontrib><creatorcontrib>Luo, Jiajun</creatorcontrib><title>A transient ionizing radiation SPICE model for PDSOI MOSFET</title><title>Microwave and optical technology letters</title><description>In this paper, a transient ionizing radiation SPICE model for PDSOI MOSFET is proposed for the simulation of the rail‐span collapse. It is based on the present understanding of transient ionizing radiation effects. The model accounts for the generation and collection of radiation induced transient photocurrent, the influence of the device geometry, and the bias conditions. Verilog‐A behavioral modeling language is utilized to implement the physically based models of the transient current sources, eliminating the use of independent current sources and lumped SPICE element models. The model is validated by comparison with the Sentaurus TCAD simulation results. The comparison of simulation and experimental results of the 64K SRAM fabricated by the 0.13 μm PDSOI technology validates the effectiveness of the dose rate model.</description><subject>Current sources</subject><subject>Dosage</subject><subject>Ionizing radiation</subject><subject>MOSFETs</subject><subject>PDSOI</subject><subject>photocurrent</subject><subject>Photoelectric effect</subject><subject>Photoelectric emission</subject><subject>Radiation</subject><subject>Radiation effects</subject><subject>Simulation</subject><subject>SPICE model</subject><subject>Transient current</subject><subject>transient ionizing radiation</subject><issn>0895-2477</issn><issn>1098-2760</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNp1kEFLwzAUx4MoOKcHv0HAk4duyUvTNHgac-pgo4PpOaRtIhlbU5MOmZ_ear16erzH7_3_8EPolpIJJQSmB99OGDAqztCIEpknIDJyjkYklzyBVIhLdBXjjhDChIARepjhLugmOtN02PnGfbnmHQddO931K95ulvMFPvja7LH1AW8et8USr4vt0-L1Gl1YvY_m5m-O0Vt_nb8kq-J5OZ-tkgqkEAkvrcgqbhkrcyp1WdlKUFlXknDgQKw2HPKSA5SpoVLmmSSZ4TrVPM0zqA0bo7shtw3-42hip3b-GJq-UgFnKeeSMtpT9wNVBR9jMFa1wR10OClK1I8b1btRv256djqwn25vTv-Dal1sho9vPtFipw</recordid><startdate>202108</startdate><enddate>202108</enddate><creator>Gao, Libo</creator><creator>Du, Chuanhua</creator><creator>Bu, Jianhui</creator><creator>Li, Jiangjiang</creator><creator>Ma, Quangang</creator><creator>Zhao, Fazhan</creator><creator>Zeng, Chao</creator><creator>Gao, Jiantou</creator><creator>Li, Duoli</creator><creator>Zeng, Chuanbin</creator><creator>Han, Zhengsheng</creator><creator>Luo, Jiajun</creator><general>John Wiley & Sons, Inc</general><general>Wiley Subscription Services, Inc</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>F28</scope><scope>FR3</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-5059-624X</orcidid></search><sort><creationdate>202108</creationdate><title>A transient ionizing radiation SPICE model for PDSOI MOSFET</title><author>Gao, Libo ; Du, Chuanhua ; Bu, Jianhui ; Li, Jiangjiang ; Ma, Quangang ; Zhao, Fazhan ; Zeng, Chao ; Gao, Jiantou ; Li, Duoli ; Zeng, Chuanbin ; Han, Zhengsheng ; Luo, Jiajun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2977-5bf76c5f33b819abcfc719dc9052520fae528b522b4e19986906e5a4a54862de3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Current sources</topic><topic>Dosage</topic><topic>Ionizing radiation</topic><topic>MOSFETs</topic><topic>PDSOI</topic><topic>photocurrent</topic><topic>Photoelectric effect</topic><topic>Photoelectric emission</topic><topic>Radiation</topic><topic>Radiation effects</topic><topic>Simulation</topic><topic>SPICE model</topic><topic>Transient current</topic><topic>transient ionizing radiation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gao, Libo</creatorcontrib><creatorcontrib>Du, Chuanhua</creatorcontrib><creatorcontrib>Bu, Jianhui</creatorcontrib><creatorcontrib>Li, Jiangjiang</creatorcontrib><creatorcontrib>Ma, Quangang</creatorcontrib><creatorcontrib>Zhao, Fazhan</creatorcontrib><creatorcontrib>Zeng, Chao</creatorcontrib><creatorcontrib>Gao, Jiantou</creatorcontrib><creatorcontrib>Li, Duoli</creatorcontrib><creatorcontrib>Zeng, Chuanbin</creatorcontrib><creatorcontrib>Han, Zhengsheng</creatorcontrib><creatorcontrib>Luo, Jiajun</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microwave and optical technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gao, Libo</au><au>Du, Chuanhua</au><au>Bu, Jianhui</au><au>Li, Jiangjiang</au><au>Ma, Quangang</au><au>Zhao, Fazhan</au><au>Zeng, Chao</au><au>Gao, Jiantou</au><au>Li, Duoli</au><au>Zeng, Chuanbin</au><au>Han, Zhengsheng</au><au>Luo, Jiajun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A transient ionizing radiation SPICE model for PDSOI MOSFET</atitle><jtitle>Microwave and optical technology letters</jtitle><date>2021-08</date><risdate>2021</risdate><volume>63</volume><issue>8</issue><spage>2103</spage><epage>2107</epage><pages>2103-2107</pages><issn>0895-2477</issn><eissn>1098-2760</eissn><abstract>In this paper, a transient ionizing radiation SPICE model for PDSOI MOSFET is proposed for the simulation of the rail‐span collapse. It is based on the present understanding of transient ionizing radiation effects. The model accounts for the generation and collection of radiation induced transient photocurrent, the influence of the device geometry, and the bias conditions. Verilog‐A behavioral modeling language is utilized to implement the physically based models of the transient current sources, eliminating the use of independent current sources and lumped SPICE element models. The model is validated by comparison with the Sentaurus TCAD simulation results. The comparison of simulation and experimental results of the 64K SRAM fabricated by the 0.13 μm PDSOI technology validates the effectiveness of the dose rate model.</abstract><cop>Hoboken, USA</cop><pub>John Wiley & Sons, Inc</pub><doi>10.1002/mop.32317</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-5059-624X</orcidid></addata></record> |
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| subjects | Current sources Dosage Ionizing radiation MOSFETs PDSOI photocurrent Photoelectric effect Photoelectric emission Radiation Radiation effects Simulation SPICE model Transient current transient ionizing radiation |
| title | A transient ionizing radiation SPICE model for PDSOI MOSFET |
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