Impact of body-biasing for negative capacitance field-effect transistor

In this study, the body-bias effects on negative capacitance FET (NCFET) are analyzed using technology computer-aided design (TCAD) device simulation with drift-diffusion model and Landau-Khalatnikov. To understand the physical origin the effects, electrical characteristics are evaluated with various ferroelectric (FE) layer thickness for NCFET as compared to the conventional MOSFET. With thicker FE layer, the total capacitance ( C Total ) becomes larger, while MOS capacitance ( C MOS ) is sustained, leading to voltage amplification because the difference between C FE and C MOS gets smaller. It gives the strong gate controllability and less sensitivity for threshold voltage ( V TH ) according to body-bias variations unlike the conventional MOSFET. Moreover, it is confirmed that the surface band-bending at the interface of NCFET is rarely changed with changing body-bias from 0V to −3V.