Negative differential resistance effect of blue phosphorene-graphene heterostructure device
We report on the electrical transport properties of new graphene/blue phosphorene heterostructure devices by density functional theory (DFT) within the non-equilibrium Green's function (NEGF) approach. From the results, it is found that the devices with different length of contacts layers show...
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| Veröffentlicht in: | Journal of physics communications 2020-03, Vol.4 (3), p.35005 |
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| creator | Zhu, Si-Cong Hu, Tie-Yi Wu, Kai-Ming Lam, Chi-Hang Yao, Kai-Lun Sun, Hua-Rui Yip, Cho-Tung |
| description | We report on the electrical transport properties of new graphene/blue phosphorene heterostructure devices by density functional theory (DFT) within the non-equilibrium Green's function (NEGF) approach. From the results, it is found that the devices with different length of contacts layers show semiconducting nature. The integrated contacted length of graphene/blue phosphorene two-layer device shows the best conductivity under a bias voltage. The negative differential resistance effect (NDR) is also found in the current-voltage curve of all the graphene/blue phosphorene devices. Transport characteristics can be explained by the eigenvalues of self-consistent Hamiltonian (MPSH). The results show that the device is fabricated from graphene/blue phosphorous and has good electrical conductivity. These interesting features will be useful for future electronic products. |
| doi_str_mv | 10.1088/2399-6528/ab7abd |
| format | Article |
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From the results, it is found that the devices with different length of contacts layers show semiconducting nature. The integrated contacted length of graphene/blue phosphorene two-layer device shows the best conductivity under a bias voltage. The negative differential resistance effect (NDR) is also found in the current-voltage curve of all the graphene/blue phosphorene devices. Transport characteristics can be explained by the eigenvalues of self-consistent Hamiltonian (MPSH). The results show that the device is fabricated from graphene/blue phosphorous and has good electrical conductivity. 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Phys. Commun</addtitle><description>We report on the electrical transport properties of new graphene/blue phosphorene heterostructure devices by density functional theory (DFT) within the non-equilibrium Green's function (NEGF) approach. From the results, it is found that the devices with different length of contacts layers show semiconducting nature. The integrated contacted length of graphene/blue phosphorene two-layer device shows the best conductivity under a bias voltage. The negative differential resistance effect (NDR) is also found in the current-voltage curve of all the graphene/blue phosphorene devices. Transport characteristics can be explained by the eigenvalues of self-consistent Hamiltonian (MPSH). The results show that the device is fabricated from graphene/blue phosphorous and has good electrical conductivity. 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| subjects | blue phosphorene first principles Graphene heterostructure negative differential resistance |
| title | Negative differential resistance effect of blue phosphorene-graphene heterostructure device |
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