Negative differential resistance effect of blue phosphorene-graphene heterostructure device

We report on the electrical transport properties of new graphene/blue phosphorene heterostructure devices by density functional theory (DFT) within the non-equilibrium Green's function (NEGF) approach. From the results, it is found that the devices with different length of contacts layers show semiconducting nature. The integrated contacted length of graphene/blue phosphorene two-layer device shows the best conductivity under a bias voltage. The negative differential resistance effect (NDR) is also found in the current-voltage curve of all the graphene/blue phosphorene devices. Transport characteristics can be explained by the eigenvalues of self-consistent Hamiltonian (MPSH). The results show that the device is fabricated from graphene/blue phosphorous and has good electrical conductivity. These interesting features will be useful for future electronic products.