Synthesis of Single-Phase MoO3-Nanoparticles Using Various Acids for the Fabrication of n-MoO3/p-Si Junction Diode

In this work, we present the synthesis and characterization of molybdenum oxide (MoO 3 ) nanoparticles (NPs). The MoO 3 NPs were coated on silicon (Si) wafer to fabricate n -MoO 3 / p -Si diode by the spin coating method. X-ray diffraction (XRD) profiles clearly show the crystalline nature of all specimens with an orthorhombic crystal system. Stretching and bending vibrations of molybdenum-oxygen were confirmed by the Fourier transform infrared analysis. The maximum absorbance was observed for MoO 3 NPs prepared from Nitric acid (HNO 3 ). Nano flakes like morphology were seen by scanning electron microscopy (SEM), and elemental dispersion spectral analysis approved expected Mo and O elements in the final product. Transmission electron microscopy (TEM) analysis of the as-prepared samples indicates a single-phase orthorhombic crystal structure. Electrical conductivity results show that synthesized samples are having semiconducting behavior. It is noted that the p–n junction diode prepared with Hydrochloric acid (HCl) has better rectifying behavior with lower ideal factor (n) values of 2.47 than the other sample.