Fabrication of HTS Low-Noise Nanobridge Josephson Junction by Gallium FIB

High-temperature superconductor (HTS) Josephson junctions (JJs) are primarily based on artificial grain boundaries. Bi-crystal JJs are typically utilized in HTS superconducting quantum interference devices (SQUIDs). However, the performances of bi-crystal JJs depend significantly on the quality of the interface at the junction. In this study, we investigate a method for forming nanobridge JJs via gallium focused ion beam (FIB) irradiation. A 100-nm-thick YBa 2 Cu 3 O 7- δ was deposited on an MgO (100) substrate via pulsed laser deposition. An additional 20-nm-thick Au layer, which serves as a protection layer preventing ion damage during alignment, was deposited in situ. HTS microchannels with a width of 4 μm were defined via photolithography and argon ion milling. The HTS microchannel widths are decreased via FIB line scans to create nanobridges. The JJs are fabricated using two types of HTS thin films, in which one has a higher critical current density ( J C ) that the other. The fabrication process using the gallium FIB was optimized and nanobridges with a junction width of 80 nm were prepared. As a result, a better with higher J C (5 MA/cm 2 ) HTS films allowed for making junctions exhibiting up to five Shapiro steps at 77 K.