Formation of a double-layer Pb reconstruction on the B-segregated Si(111) surface

•Pb adsorption onto the boron-segregated Si(111) substrate leads to the formation of a surface structure that was never observed in the Pb/Si(111) system.•The structure of the layer was studied by STM, ARPES and DFT.•The Pb/Si(111)-B surface consists of Pb bilayer with 3×3 periodicity. [Display omit...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Surface science 2021-04, Vol.706, p.121784, Article 121784
Hauptverfasser: Gruznev, D.V., Bondarenko, L.V., Tupchaya, A.Y., Yakovlev, A.A., Slyshkin, A.V., Mihalyuk, A.N., Zotov, A.V., Saranin, A.A.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:•Pb adsorption onto the boron-segregated Si(111) substrate leads to the formation of a surface structure that was never observed in the Pb/Si(111) system.•The structure of the layer was studied by STM, ARPES and DFT.•The Pb/Si(111)-B surface consists of Pb bilayer with 3×3 periodicity. [Display omitted] A novel low-dimensional structure of Pb is found to form on the B-segregated heavily doped p-type Si(111) substrate. The hole doping changes the growth mode of the Pb/Si(111) layer resulting in the formation of a double-layer film, which structure drastically differs from the typical single-layer hexagonal incommensurate (HIC) or striped incommensurate (SIC) phases in the Pb/Si(111) system. Using scanning tunneling microscopy, angle-resolved photoelectron spectroscopy, and density functional theory calculations, the atomic arrangement and electronic band structure of this surface reconstruction were examined. Two possible models were proposed both being constructed from the similar Pb bilayer (ΘPb = 2 ML) with 3×3 periodicity, but having different orientations relative to the B-segregated Si(111) substrate. Both models produce a similar electronic band structure consistent with an experimentally obtained ARPES spectrum.
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2020.121784