Transport of Secondary Ions—Products of the Inelastic Interaction of Protons with Integrated-Circuit Materials

A model based on depositing charge in the sensitive volume of an integrated circuit is used to estimate the probability of single event upset as a result of the interaction of single proton with the circuit materials. Calculations of the number of electron—hole pairs produced by the primary proton a...

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Veröffentlicht in:	Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2021-03, Vol.15 (2), p.236-242
Hauptverfasser:	Novikov, N. V., Chechenin, N. G., Shirokova, A. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Inelastic collisions Integrated circuits Materials Science Protons Single event upsets Surfaces and Interfaces Thin Films
Online-Zugang:	Volltext
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