Transport of Secondary Ions—Products of the Inelastic Interaction of Protons with Integrated-Circuit Materials

A model based on depositing charge in the sensitive volume of an integrated circuit is used to estimate the probability of single event upset as a result of the interaction of single proton with the circuit materials. Calculations of the number of electron—hole pairs produced by the primary proton a...

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Veröffentlicht in:	Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2021-03, Vol.15 (2), p.236-242
Hauptverfasser:	Novikov, N. V., Chechenin, N. G., Shirokova, A. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Inelastic collisions Integrated circuits Materials Science Protons Single event upsets Surfaces and Interfaces Thin Films
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Beschreibung
Zusammenfassung:	A model based on depositing charge in the sensitive volume of an integrated circuit is used to estimate the probability of single event upset as a result of the interaction of single proton with the circuit materials. Calculations of the number of electron—hole pairs produced by the primary proton and secondary ions as a result of inelastic collision with the nucleus in the sensitive volume and surround materials make it possible to estimate the ratio of the contributions of these sources to the deposited charge.
ISSN:	1027-4510 1819-7094
DOI:	10.1134/S1027451021020117