Features of the Properties of the Surface of (GaAs)1 – x – у(Ge2)x(ZnSe)y Semiconductor Solid Solution with ZnSe Quantum Dots

—(GaAs) 1 – x – у (Ge 2 ) x (ZnSe) y films with ZnSe quantum dots by the liquid-phase epitaxy method are grown for the first time. The grown layers had p- type conductivity with a carrier concentration of 5.8 × 10 15 cm –3 , mobility of μ = 359 cm 2 /(V s) and resistivity of 3 Ohm cm. X-ray diffraction investigation demonstrated that the obtained film is single crystal, composed of blocks with sizes of 52 nm, has the 100 orientation, and the sphalerite-type structure (ZnS-type). It is found that paired Ge atoms partially replace GaAs molecules in regions of imperfections of the matrix lattice and form nanocrystals with sizes of 44 nm. It is determined that molecules of zinc selenide grow on the surface of GaAs 1 – x Ge x solid solution in the shape of islands-domes – quantum dots with sizes of R = 25–35 nm, a height of h = 7–12 nm, and a density of 3.7 × 10 9 cm –2 .