Effects of incomplete ionization on forward current–voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation

The forward current–voltage characteristics of p-type diamond pseudo-vertical Schottky barrier diodes are investigated via numerical simulation. Impact ionization decrease the hole concentration of the p− drift layer from 10 15 to 10 14  cm –3 at 300 K, thereby increasing the forward voltage drop an...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2021-06, Vol.60 (SC), p.SCCE08
Hauptverfasser:	Seok, Ogyun, Ha, Min-Woo
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact resistance Current voltage characteristics Diamonds Drift Electronic devices Ionization Schottky diodes Voltage drop
Online-Zugang:	Volltext
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