Effects of incomplete ionization on forward current–voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation
The forward current–voltage characteristics of p-type diamond pseudo-vertical Schottky barrier diodes are investigated via numerical simulation. Impact ionization decrease the hole concentration of the p− drift layer from 10 15 to 10 14 cm –3 at 300 K, thereby increasing the forward voltage drop an...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2021-06, Vol.60 (SC), p.SCCE08 |
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| container_title | Japanese Journal of Applied Physics |
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| creator | Seok, Ogyun Ha, Min-Woo |
| description | The forward current–voltage characteristics of p-type diamond pseudo-vertical Schottky barrier diodes are investigated via numerical simulation. Impact ionization decrease the hole concentration of the p− drift layer from 10
15
to 10
14
cm
–3
at 300 K, thereby increasing the forward voltage drop and on-resistance. When we consider an incomplete ionization with increasing temperature, the increase in the hole concentration is more dominant than the enhanced phonon scattering, thereby resulting in an increasing forward current. We modified the Ohmic contact for both metallic conduction at the p+ layer and incomplete ionization at the p– drift layer. The Baliga figure-of-merit of the device with and without incomplete ionization is 25 and 192 MW cm
−2
, respectively. Incomplete ionization should be considered in the numerical study of diamond power devices. |
| doi_str_mv | 10.35848/1347-4065/abf2a7 |
| format | Article |
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15
to 10
14
cm
–3
at 300 K, thereby increasing the forward voltage drop and on-resistance. When we consider an incomplete ionization with increasing temperature, the increase in the hole concentration is more dominant than the enhanced phonon scattering, thereby resulting in an increasing forward current. We modified the Ohmic contact for both metallic conduction at the p+ layer and incomplete ionization at the p– drift layer. The Baliga figure-of-merit of the device with and without incomplete ionization is 25 and 192 MW cm
−2
, respectively. Incomplete ionization should be considered in the numerical study of diamond power devices.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.35848/1347-4065/abf2a7</identifier><language>eng</language><publisher>Tokyo: Japanese Journal of Applied Physics</publisher><subject>Contact resistance ; Current voltage characteristics ; Diamonds ; Drift ; Electronic devices ; Ionization ; Schottky diodes ; Voltage drop</subject><ispartof>Japanese Journal of Applied Physics, 2021-06, Vol.60 (SC), p.SCCE08</ispartof><rights>Copyright Japanese Journal of Applied Physics Jun 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c273t-8c572565f94daf0e0242e01d52f5735f3375adc0bdf8300eff5db57622ca645c3</citedby><cites>FETCH-LOGICAL-c273t-8c572565f94daf0e0242e01d52f5735f3375adc0bdf8300eff5db57622ca645c3</cites><orcidid>0000-0001-6593-227X ; 0000-0002-8585-5002</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Seok, Ogyun</creatorcontrib><creatorcontrib>Ha, Min-Woo</creatorcontrib><title>Effects of incomplete ionization on forward current–voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation</title><title>Japanese Journal of Applied Physics</title><description>The forward current–voltage characteristics of p-type diamond pseudo-vertical Schottky barrier diodes are investigated via numerical simulation. Impact ionization decrease the hole concentration of the p− drift layer from 10
15
to 10
14
cm
–3
at 300 K, thereby increasing the forward voltage drop and on-resistance. When we consider an incomplete ionization with increasing temperature, the increase in the hole concentration is more dominant than the enhanced phonon scattering, thereby resulting in an increasing forward current. We modified the Ohmic contact for both metallic conduction at the p+ layer and incomplete ionization at the p– drift layer. The Baliga figure-of-merit of the device with and without incomplete ionization is 25 and 192 MW cm
−2
, respectively. Incomplete ionization should be considered in the numerical study of diamond power devices.</description><subject>Contact resistance</subject><subject>Current voltage characteristics</subject><subject>Diamonds</subject><subject>Drift</subject><subject>Electronic devices</subject><subject>Ionization</subject><subject>Schottky diodes</subject><subject>Voltage drop</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNo9UMtKAzEUDaJgrX6Au4DrsXlOpksp9QEFF-o6pHnY1JnJmGSUuvIfxB_0S5y2Ilw4nHvPPQcOAOcYXVJesWqCKRMFQyWfqKUjShyA0f_qEIwQIrhgU0KOwUlK64GWnOER-J47Z3VOMDjoWx2arrbZQh9a_6HyAHAYF-K7igbqPkbb5p_Pr7dQZ_VsoV6pqHS20afs9c6lK_Kms9B41YTWwAe9Cjm_bOBSxehtHA7B2DTQZM3WvO2b4V2rGibf9PUu9BQcOVUne_aHY_B0PX-c3RaL-5u72dWi0ETQXFSaC8JL7qbMKIcsIoxYhA0njgvKHaWCK6PR0riKImSd42bJRUmIViXjmo7Bxd63i-G1tynLdehjO0RKwjHHglWUDSq8V-kYUorWyS76RsWNxEju2pfbquW2arlvn_4C3aV9og</recordid><startdate>20210601</startdate><enddate>20210601</enddate><creator>Seok, Ogyun</creator><creator>Ha, Min-Woo</creator><general>Japanese Journal of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6593-227X</orcidid><orcidid>https://orcid.org/0000-0002-8585-5002</orcidid></search><sort><creationdate>20210601</creationdate><title>Effects of incomplete ionization on forward current–voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation</title><author>Seok, Ogyun ; Ha, Min-Woo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c273t-8c572565f94daf0e0242e01d52f5735f3375adc0bdf8300eff5db57622ca645c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Contact resistance</topic><topic>Current voltage characteristics</topic><topic>Diamonds</topic><topic>Drift</topic><topic>Electronic devices</topic><topic>Ionization</topic><topic>Schottky diodes</topic><topic>Voltage drop</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Seok, Ogyun</creatorcontrib><creatorcontrib>Ha, Min-Woo</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Seok, Ogyun</au><au>Ha, Min-Woo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of incomplete ionization on forward current–voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><date>2021-06-01</date><risdate>2021</risdate><volume>60</volume><issue>SC</issue><spage>SCCE08</spage><pages>SCCE08-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><abstract>The forward current–voltage characteristics of p-type diamond pseudo-vertical Schottky barrier diodes are investigated via numerical simulation. Impact ionization decrease the hole concentration of the p− drift layer from 10
15
to 10
14
cm
–3
at 300 K, thereby increasing the forward voltage drop and on-resistance. When we consider an incomplete ionization with increasing temperature, the increase in the hole concentration is more dominant than the enhanced phonon scattering, thereby resulting in an increasing forward current. We modified the Ohmic contact for both metallic conduction at the p+ layer and incomplete ionization at the p– drift layer. The Baliga figure-of-merit of the device with and without incomplete ionization is 25 and 192 MW cm
−2
, respectively. Incomplete ionization should be considered in the numerical study of diamond power devices.</abstract><cop>Tokyo</cop><pub>Japanese Journal of Applied Physics</pub><doi>10.35848/1347-4065/abf2a7</doi><orcidid>https://orcid.org/0000-0001-6593-227X</orcidid><orcidid>https://orcid.org/0000-0002-8585-5002</orcidid></addata></record> |
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| subjects | Contact resistance Current voltage characteristics Diamonds Drift Electronic devices Ionization Schottky diodes Voltage drop |
| title | Effects of incomplete ionization on forward current–voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation |
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