Plasma-enhanced atomic layer deposition of Zn-doped GaP

Plasma-enhanced atomic layer deposition of Zn-doped GaP

The formation of p-type GaP by plasma-enhanced atomic layer deposition at a temperature of 380 °C has been studied. The incorporation of Zn impurity was detected by the method of glow discharge optical emission spectroscopy (GDOES). Strong band bending was confirmed by electrical measurements perfor...

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Veröffentlicht in:Journal of physics. Conference series 2021-03, Vol.1851 (1), p.12009
Hauptverfasser: Uvarov, A V, Gudovskikh, A S, Baranov, A I, Morozov, I A, Kudryashov, D A
Format: Artikel
Sprache:eng
Schlagworte:
Atomic layer epitaxy
Atomic properties
Bend strength
Converters
Electrical measurement
Glow discharges
Homojunctions
Impurities
Optical emission spectroscopy
Physics
Substrates
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Zusammenfassung:The formation of p-type GaP by plasma-enhanced atomic layer deposition at a temperature of 380 °C has been studied. The incorporation of Zn impurity was detected by the method of glow discharge optical emission spectroscopy (GDOES). Strong band bending was confirmed by electrical measurements performed for the p-n homojunctions formed by deposition of p-GaP on the surface of n-type GaP substrates, which indicates the acceptor behavior of the impurity. It has been shown that p-type GaP deposited by PE-ALD can be used to form photovoltaic converters.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1851/1/012009