Centers of cold electron emission from molybdenum thin films

Thin-film semiconductor devices and functional metal-oxide-semiconductor structures have drawn attention as being applicable for on-chip electronics. Similar structures, however, were also reported to be promising as efficient sources of electrons. This paper presents the results of scanning electro...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of physics. Conference series 2021-03, Vol.1851 (1), p.12022
Hauptverfasser: Bizyaev, I S, Osipov, V S, Babyuk, V Ye, Struchkov, A I, Gnuchev, N M
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Thin-film semiconductor devices and functional metal-oxide-semiconductor structures have drawn attention as being applicable for on-chip electronics. Similar structures, however, were also reported to be promising as efficient sources of electrons. This paper presents the results of scanning electron microscopy analysis of molybdenum thin films capable of low-macroscopic-field electron emission. Supposedly, the images show the centres of cold-field emission at different stages of their life cycles from activation to destruction. It is assumed that initially continuous Mo films experience dewetting under heating and ion bombardment, which are caused by the emission current flow. The results contribute to understanding the mechanism of low-field emission from thin metal films, which seems to be different from those previously proposed for thin carbon coatings.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1851/1/012022