Near-field magneto-photoluminescence of GaAs/AlGaAs/InP/GaInP2 quantum well-quantum dot structures

Near-field magneto-photoluminescence of GaAs/AlGaAs/InP/GaInP2 quantum well-quantum dot structures

This work presents the results of the growth, structural characterization and magneto-photoluminescence spectroscopy measurements of GaAs/AlGaAs/InP/GaInP 2 quantum well-quantum dot structures. We demonstrate that GaAs/AlGaAs QDs in these structures are formed above InP/GaInP 2 QDs. This allows us t...

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Veröffentlicht in:Journal of physics. Conference series 2021-03, Vol.1851 (1), p.12015
Hauptverfasser: Afanasev, K M, Vlasov, A S, Lebedev, D V, Rakhlin, M V, Galimov, A I, Toropov, A A, Bert, N, Nevedomskiy, V N, Mintairov, S A, Kalyuzhnyy, N A, Saly, R A, Mintairov, A M
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium arsenides
Photoluminescence
Physics
Quantum dots
Quantum wells
Structural analysis
Zeeman effect
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Beschreibung
Zusammenfassung:This work presents the results of the growth, structural characterization and magneto-photoluminescence spectroscopy measurements of GaAs/AlGaAs/InP/GaInP 2 quantum well-quantum dot structures. We demonstrate that GaAs/AlGaAs QDs in these structures are formed above InP/GaInP 2 QDs. This allows us to measure the internal magnetic field in the InP/GaInP 2 QD by monitoring the Zeeman splitting of the excitonic transition in the GaAs/AlGaAs QD.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/1851/1/012015