Evolution of Electron Transport under Resistive Switching in Porphyrazine Films

Evolution of Electron Transport under Resistive Switching in Porphyrazine Films

An analysis of the I – V characteristics makes it possible to determine the mechanisms of conduction corresponding to different states of the flow channels upon resistive switching in porphyrazine films. A variation in the temperature, the structure of the dielectric matrix, and the type of majority...

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Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2021-03, Vol.55 (3), p.296-300
Hauptverfasser: Drozdov, K. A., Krylov, I. V., Vasilik, V. A., Kosov, A. D., Dubinina, T. V., Ryabova, L. I., Khokhlov, D. R.
Format: Artikel
Sprache:eng
Schlagworte:
Analysis
Conduction
Current carriers
Current voltage characteristics
Electron transport
Electronic Properties of Semiconductors
Filaments
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Switching
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Zusammenfassung:An analysis of the I – V characteristics makes it possible to determine the mechanisms of conduction corresponding to different states of the flow channels upon resistive switching in porphyrazine films. A variation in the temperature, the structure of the dielectric matrix, and the type of majority charge carriers makes it possible to estimate the applicability of the model of conducting filaments for describing transport and determining the mechanisms of conduction for each state of the system.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782621030052