Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction

A study of the electroluminescence of asymmetric InAs/InAs 1 – y Sb y /InAsSbP light-emitting diode heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y = 0 . 15 and y = 0 . 16 in the temperature range 4.2–300 K is reported. It is found on the basis of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Semiconductors (Woodbury, N.Y.) N.Y.), 2021-03, Vol.55 (3), p.354-358
Hauptverfasser:	Semakova, A. A., Romanov, V. V., Bazhenov, N. L., Mynbaev, K. D., Moiseev, K. D.
Format:	Artikel
Sprache:	eng
Schlagworte:	Electroluminescence Heterojunctions Heterostructures Indium arsenide antimonide phosphide Light emitting diodes Magnetic Materials Magnetism Physics Physics and Astronomy Physics of Semiconductor Devices Solid solutions Temperature Temperature dependence
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!