Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction

A study of the electroluminescence of asymmetric InAs/InAs 1 – y Sb y /InAsSbP light-emitting diode heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y = 0 . 15 and y = 0 . 16 in the temperature range 4.2–300 K is reported. It is found on the basis of experimental data that a staggered type-II heterojunction is formed at the InAs 1 – y Sb y /InAs 0.41 Sb 0.28 P 0.40 heterointerface. It is shown that interfacial radiative transitions at the type-II heterointerface make a dominant contribution in the temperature range of 4.2–180 K. This enables minimization of the temperature dependence of the operating wavelength of a light-emitting diode.