Preparation of Ga2O3/ZnO/WO3 double S-scheme heterojunction composite nanofibers by electrospinning method for enhancing photocatalytic activity

Ga 2 O 3 is a semiconductor material with ultra-wide band gap ( E g = 4.9 eV), which has photocatalytic activity only under deep ultraviolet light irradiation ( λ

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Veröffentlicht in:	Journal of materials science. Materials in electronics 2021-03, Vol.32 (6), p.7307-7318
Hauptverfasser:	Zhang, Guixiang, Zhang, Haiming, Wang, Rufeng, Liu, Haoxuan, He, Qingchen, Zhang, Xianjing, Li, Yujie
Format:	Artikel
Sprache:	eng
Schlagworte:	Catalytic activity Characterization and Evaluation of Materials Chemistry and Materials Science Conduction bands Degradation Electric fields Electrospinning Energy bands Gallium oxides Heterojunctions Light irradiation Materials Science Nanofibers Optical and Electronic Materials Oxidation Photocatalysis Rhodamine Semiconductor materials Ultraviolet radiation Ultraviolet spectra Valence band Visible spectrum Zinc oxide
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Beschreibung
Zusammenfassung:	Ga 2 O 3 is a semiconductor material with ultra-wide band gap ( E g = 4.9 eV), which has photocatalytic activity only under deep ultraviolet light irradiation ( λ
ISSN:	0957-4522 1573-482X
DOI:	10.1007/s10854-021-05441-4