High-performance energy storage of highly saturated ferromagnetic cobalt-doped cuprous oxide thin films

Pure and other concentrations of cobalt (Co 2+ ) ions incorporated into cuprous oxide Cu 2−x Co x O ( x = 0–14 mM) thin films were successfully deposited in fluorine-doped tin oxide (FTO) glass substrate by employing electro deposition technique. The crystallite size of pure and Co-doped thin films was investigated from 29.03 to 43.38 nm using X-ray diffraction (XRD) patterns. Scanning electron microscope (SEM) images display three-sided pyramid shape morphology of pure Cu 2 O thin films that get significantly changed, as and when Co concentrations get increased. The optical bandgap value gets continuously increased from 2.128 to 2.297 eV for a 0–14 mM change in Co doping concentration. Vibrating sample magnetometer (VSM) pictures the film that exhibits a better ferromagnetic property with a saturation magnetism of 159.96 E −6 emu for 14 mM Co dopant. X-ray photoelectron spectroscopy (XPS) confirm the presence of cobalt (Co 2+ ) as a dopant in the host Cu 2 O thin films. The Cu 2−86 Co 14 O ( x = 14 mM) thin film has a higher specific capacitance of 164.90 F/g with 3.66 Wh/kg energy density at the current density of 2 A/g. It has a good energy and a power density in the higher concentration Co-doped Cu 2 O thin films applicable for energy storage devices.