Thermal oxidation rates and resulting optical constants of Al0.83In0.17N films grown on GaN

The thermal oxidation rates of Al0.83In0.17N layers grown lattice-matched to GaN and the oxide's optical constants are studied. The ∼230 nm thick AlInN layers are placed into a horizontal furnace at elevated temperatures and exposed to either O2 (dry) or H2O vapor with an N2 carrier gas (wet)....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2021-03, Vol.129 (12)
Hauptverfasser: Palmese, Elia, Peart, Matthew R., Borovac, Damir, Song, Renbo, Tansu, Nelson, Wierer, Jonathan J.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The thermal oxidation rates of Al0.83In0.17N layers grown lattice-matched to GaN and the oxide's optical constants are studied. The ∼230 nm thick AlInN layers are placed into a horizontal furnace at elevated temperatures and exposed to either O2 (dry) or H2O vapor with an N2 carrier gas (wet). The samples are oxidized at different temperatures (830–870 °C) and at a constant time or at various times at a constant temperature of 830 °C. Spectroscopic ellipsometry is used to determine the oxide thicknesses, refractive index, and extinction coefficients. The oxidation rate for the wet conditions is faster than for the dry conditions, and both increase with temperature, as expected. However, the oxidation rate is also dynamic with time and can be fitted with the Deal–Grove model, suggesting reaction rate and diffusion-limited processes like other more mature semiconductors. Finally, the dry conditions produce oxides that expand more than the oxides produced under wet conditions. The ability to thermally oxidize Al0.83In0.17N layers lattice-matched to GaN is a promising process technique for producing new III-nitride-based electronic devices.
ISSN:0021-8979
1089-7550
DOI:10.1063/5.0035711