Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range
We demonstrate that the magneto-optical Kerr effect at normal incidence in the terahertz (THz) frequency range is useful for evaluating carrier transport properties of particular layers of a p - n junction. Since a single p -type thin film only exhibits a small magneto-optical Kerr effect, magneto-o...
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| Veröffentlicht in: | Journal of infrared, millimeter and terahertz waves millimeter and terahertz waves, 2021-03, Vol.42 (3), p.325-337 |
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| container_title | Journal of infrared, millimeter and terahertz waves |
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| creator | Miyagawa, Keita Nagai, Masaya Ashida, Masaaki Kim, Changsu Akiyama, Hidefumi |
| description | We demonstrate that the magneto-optical Kerr effect at normal incidence in the terahertz (THz) frequency range is useful for evaluating carrier transport properties of particular layers of a
p
-
n
junction. Since a single
p
-type thin film only exhibits a small magneto-optical Kerr effect, magneto-optical Kerr spectroscopy cannot be used to determine the carrier densities of such a film with high sensitivity. However, because the electric field is enhanced at the
p
-layer in a
p
-
n
junction due to the interference between the THz waves that are reflected at the highly doped substrate and the
p
-layer at the surface, it is possible to conduct magneto-optical Kerr spectroscopy with a higher sensitivity. We numerically calculate and experimentally determine the spectra of the ellipticity and polarization rotation angles for single
n
- and
p
-GaAs epitaxial layers and GaAs-based photovoltaic devices with a
p-i-n
structure and evaluate the carrier densities of the
n
- and
p
-layers. At normal incidence, this method has a high spatial resolution, which is beneficial for imaging of large-area devices. |
| doi_str_mv | 10.1007/s10762-021-00779-6 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2500913658</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2500913658</sourcerecordid><originalsourceid>FETCH-LOGICAL-c429t-75eaa0d209d5169328daf35064fbd6ab915d06520534e1d15d5bcb039dd102323</originalsourceid><addsrcrecordid>eNp9kM1OwzAQhC0EEqXwApwscTasndiJj6Uq5adQhIo4Wk7stKmKU2z3AE-PISBunHZXmpnd_RA6pXBOAYqLQKEQjACjJI2FJGIPDWgpBBESxP5vX0p2iI5CWAOIPJdigF4mbqVdbQ2-10tnY0fm29jWeoPvrPd40jS2jrhr8FSPArnUISkfyQO-3bk6tp0LuHU4rixeWK9X1scP_KTd0h6jg0Zvgj35qUP0fDVZjK_JbD69GY9mpM6ZjKTgVmswDKThVMiMlUY3GU_XNZURupKUGxCcAc9yS02aeFVXkEljKLCMZUN01uduffe2syGqdbfzLq1UjANImgleJhXrVbXvQvC2UVvfvmr_riioL4CqB6gSQPUNUIlkynpTSOL0kv-L_sf1CW8TcTw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2500913658</pqid></control><display><type>article</type><title>Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range</title><source>SpringerLink Journals - AutoHoldings</source><creator>Miyagawa, Keita ; Nagai, Masaya ; Ashida, Masaaki ; Kim, Changsu ; Akiyama, Hidefumi</creator><creatorcontrib>Miyagawa, Keita ; Nagai, Masaya ; Ashida, Masaaki ; Kim, Changsu ; Akiyama, Hidefumi</creatorcontrib><description>We demonstrate that the magneto-optical Kerr effect at normal incidence in the terahertz (THz) frequency range is useful for evaluating carrier transport properties of particular layers of a
p
-
n
junction. Since a single
p
-type thin film only exhibits a small magneto-optical Kerr effect, magneto-optical Kerr spectroscopy cannot be used to determine the carrier densities of such a film with high sensitivity. However, because the electric field is enhanced at the
p
-layer in a
p
-
n
junction due to the interference between the THz waves that are reflected at the highly doped substrate and the
p
-layer at the surface, it is possible to conduct magneto-optical Kerr spectroscopy with a higher sensitivity. We numerically calculate and experimentally determine the spectra of the ellipticity and polarization rotation angles for single
n
- and
p
-GaAs epitaxial layers and GaAs-based photovoltaic devices with a
p-i-n
structure and evaluate the carrier densities of the
n
- and
p
-layers. At normal incidence, this method has a high spatial resolution, which is beneficial for imaging of large-area devices.</description><identifier>ISSN: 1866-6892</identifier><identifier>EISSN: 1866-6906</identifier><identifier>DOI: 10.1007/s10762-021-00779-6</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Carrier density ; Carrier transport ; Classical Electrodynamics ; Electric fields ; Electrical Engineering ; Electrical junctions ; Electronics and Microelectronics ; Ellipticity ; Engineering ; Epitaxial layers ; Frequency ranges ; Gallium arsenide ; Incidence ; Instrumentation ; Kerr effects ; Kerr magnetooptical effect ; P-n junctions ; Photovoltaic cells ; Sensitivity ; Spatial resolution ; Spectroscopy ; Spectrum analysis ; Substrates ; Terahertz frequencies ; Thin films ; Transport properties</subject><ispartof>Journal of infrared, millimeter and terahertz waves, 2021-03, Vol.42 (3), p.325-337</ispartof><rights>The Author(s) 2021</rights><rights>The Author(s) 2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c429t-75eaa0d209d5169328daf35064fbd6ab915d06520534e1d15d5bcb039dd102323</citedby><cites>FETCH-LOGICAL-c429t-75eaa0d209d5169328daf35064fbd6ab915d06520534e1d15d5bcb039dd102323</cites><orcidid>0000-0001-7218-1849</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10762-021-00779-6$$EPDF$$P50$$Gspringer$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10762-021-00779-6$$EHTML$$P50$$Gspringer$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,27923,27924,41487,42556,51318</link.rule.ids></links><search><creatorcontrib>Miyagawa, Keita</creatorcontrib><creatorcontrib>Nagai, Masaya</creatorcontrib><creatorcontrib>Ashida, Masaaki</creatorcontrib><creatorcontrib>Kim, Changsu</creatorcontrib><creatorcontrib>Akiyama, Hidefumi</creatorcontrib><title>Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range</title><title>Journal of infrared, millimeter and terahertz waves</title><addtitle>J Infrared Milli Terahz Waves</addtitle><description>We demonstrate that the magneto-optical Kerr effect at normal incidence in the terahertz (THz) frequency range is useful for evaluating carrier transport properties of particular layers of a
p
-
n
junction. Since a single
p
-type thin film only exhibits a small magneto-optical Kerr effect, magneto-optical Kerr spectroscopy cannot be used to determine the carrier densities of such a film with high sensitivity. However, because the electric field is enhanced at the
p
-layer in a
p
-
n
junction due to the interference between the THz waves that are reflected at the highly doped substrate and the
p
-layer at the surface, it is possible to conduct magneto-optical Kerr spectroscopy with a higher sensitivity. We numerically calculate and experimentally determine the spectra of the ellipticity and polarization rotation angles for single
n
- and
p
-GaAs epitaxial layers and GaAs-based photovoltaic devices with a
p-i-n
structure and evaluate the carrier densities of the
n
- and
p
-layers. At normal incidence, this method has a high spatial resolution, which is beneficial for imaging of large-area devices.</description><subject>Carrier density</subject><subject>Carrier transport</subject><subject>Classical Electrodynamics</subject><subject>Electric fields</subject><subject>Electrical Engineering</subject><subject>Electrical junctions</subject><subject>Electronics and Microelectronics</subject><subject>Ellipticity</subject><subject>Engineering</subject><subject>Epitaxial layers</subject><subject>Frequency ranges</subject><subject>Gallium arsenide</subject><subject>Incidence</subject><subject>Instrumentation</subject><subject>Kerr effects</subject><subject>Kerr magnetooptical effect</subject><subject>P-n junctions</subject><subject>Photovoltaic cells</subject><subject>Sensitivity</subject><subject>Spatial resolution</subject><subject>Spectroscopy</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><subject>Terahertz frequencies</subject><subject>Thin films</subject><subject>Transport properties</subject><issn>1866-6892</issn><issn>1866-6906</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>C6C</sourceid><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kM1OwzAQhC0EEqXwApwscTasndiJj6Uq5adQhIo4Wk7stKmKU2z3AE-PISBunHZXmpnd_RA6pXBOAYqLQKEQjACjJI2FJGIPDWgpBBESxP5vX0p2iI5CWAOIPJdigF4mbqVdbQ2-10tnY0fm29jWeoPvrPd40jS2jrhr8FSPArnUISkfyQO-3bk6tp0LuHU4rixeWK9X1scP_KTd0h6jg0Zvgj35qUP0fDVZjK_JbD69GY9mpM6ZjKTgVmswDKThVMiMlUY3GU_XNZURupKUGxCcAc9yS02aeFVXkEljKLCMZUN01uduffe2syGqdbfzLq1UjANImgleJhXrVbXvQvC2UVvfvmr_riioL4CqB6gSQPUNUIlkynpTSOL0kv-L_sf1CW8TcTw</recordid><startdate>20210301</startdate><enddate>20210301</enddate><creator>Miyagawa, Keita</creator><creator>Nagai, Masaya</creator><creator>Ashida, Masaaki</creator><creator>Kim, Changsu</creator><creator>Akiyama, Hidefumi</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>C6C</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>P5Z</scope><scope>P62</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><orcidid>https://orcid.org/0000-0001-7218-1849</orcidid></search><sort><creationdate>20210301</creationdate><title>Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range</title><author>Miyagawa, Keita ; Nagai, Masaya ; Ashida, Masaaki ; Kim, Changsu ; Akiyama, Hidefumi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c429t-75eaa0d209d5169328daf35064fbd6ab915d06520534e1d15d5bcb039dd102323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Carrier density</topic><topic>Carrier transport</topic><topic>Classical Electrodynamics</topic><topic>Electric fields</topic><topic>Electrical Engineering</topic><topic>Electrical junctions</topic><topic>Electronics and Microelectronics</topic><topic>Ellipticity</topic><topic>Engineering</topic><topic>Epitaxial layers</topic><topic>Frequency ranges</topic><topic>Gallium arsenide</topic><topic>Incidence</topic><topic>Instrumentation</topic><topic>Kerr effects</topic><topic>Kerr magnetooptical effect</topic><topic>P-n junctions</topic><topic>Photovoltaic cells</topic><topic>Sensitivity</topic><topic>Spatial resolution</topic><topic>Spectroscopy</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><topic>Terahertz frequencies</topic><topic>Thin films</topic><topic>Transport properties</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Miyagawa, Keita</creatorcontrib><creatorcontrib>Nagai, Masaya</creatorcontrib><creatorcontrib>Ashida, Masaaki</creatorcontrib><creatorcontrib>Kim, Changsu</creatorcontrib><creatorcontrib>Akiyama, Hidefumi</creatorcontrib><collection>Springer Nature OA Free Journals</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><jtitle>Journal of infrared, millimeter and terahertz waves</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Miyagawa, Keita</au><au>Nagai, Masaya</au><au>Ashida, Masaaki</au><au>Kim, Changsu</au><au>Akiyama, Hidefumi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range</atitle><jtitle>Journal of infrared, millimeter and terahertz waves</jtitle><stitle>J Infrared Milli Terahz Waves</stitle><date>2021-03-01</date><risdate>2021</risdate><volume>42</volume><issue>3</issue><spage>325</spage><epage>337</epage><pages>325-337</pages><issn>1866-6892</issn><eissn>1866-6906</eissn><abstract>We demonstrate that the magneto-optical Kerr effect at normal incidence in the terahertz (THz) frequency range is useful for evaluating carrier transport properties of particular layers of a
p
-
n
junction. Since a single
p
-type thin film only exhibits a small magneto-optical Kerr effect, magneto-optical Kerr spectroscopy cannot be used to determine the carrier densities of such a film with high sensitivity. However, because the electric field is enhanced at the
p
-layer in a
p
-
n
junction due to the interference between the THz waves that are reflected at the highly doped substrate and the
p
-layer at the surface, it is possible to conduct magneto-optical Kerr spectroscopy with a higher sensitivity. We numerically calculate and experimentally determine the spectra of the ellipticity and polarization rotation angles for single
n
- and
p
-GaAs epitaxial layers and GaAs-based photovoltaic devices with a
p-i-n
structure and evaluate the carrier densities of the
n
- and
p
-layers. At normal incidence, this method has a high spatial resolution, which is beneficial for imaging of large-area devices.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10762-021-00779-6</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0001-7218-1849</orcidid><oa>free_for_read</oa></addata></record> |
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| ispartof | Journal of infrared, millimeter and terahertz waves, 2021-03, Vol.42 (3), p.325-337 |
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| subjects | Carrier density Carrier transport Classical Electrodynamics Electric fields Electrical Engineering Electrical junctions Electronics and Microelectronics Ellipticity Engineering Epitaxial layers Frequency ranges Gallium arsenide Incidence Instrumentation Kerr effects Kerr magnetooptical effect P-n junctions Photovoltaic cells Sensitivity Spatial resolution Spectroscopy Spectrum analysis Substrates Terahertz frequencies Thin films Transport properties |
| title | Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range |
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