Enhanced Magneto-Optical Kerr Effect of GaAs-Based P-N Junctions in the Terahertz Range

We demonstrate that the magneto-optical Kerr effect at normal incidence in the terahertz (THz) frequency range is useful for evaluating carrier transport properties of particular layers of a p - n junction. Since a single p -type thin film only exhibits a small magneto-optical Kerr effect, magneto-optical Kerr spectroscopy cannot be used to determine the carrier densities of such a film with high sensitivity. However, because the electric field is enhanced at the p -layer in a p - n junction due to the interference between the THz waves that are reflected at the highly doped substrate and the p -layer at the surface, it is possible to conduct magneto-optical Kerr spectroscopy with a higher sensitivity. We numerically calculate and experimentally determine the spectra of the ellipticity and polarization rotation angles for single n - and p -GaAs epitaxial layers and GaAs-based photovoltaic devices with a p-i-n structure and evaluate the carrier densities of the n - and p -layers. At normal incidence, this method has a high spatial resolution, which is beneficial for imaging of large-area devices.