Erratum: Method for Analyzing the Temperature and Pressure Dependence of the Growth of an Oxide Film in the Thermal Oxidation of Si and SiC [J. Phys. Soc. Jpn. 89, 104602 (2020)]

Erratum: Method for Analyzing the Temperature and Pressure Dependence of the Growth of an Oxide Film in the Thermal Oxidation of Si and SiC [J. Phys. Soc. Jpn. 89, 104602 (2020)]

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Veröffentlicht in:Journal of the Physical Society of Japan 2021-03, Vol.90 (3), p.38001
1. Verfasser: Itoh, Makoto
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title Erratum: Method for Analyzing the Temperature and Pressure Dependence of the Growth of an Oxide Film in the Thermal Oxidation of Si and SiC [J. Phys. Soc. Jpn. 89, 104602 (2020)]
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