Sulfur-vacancies promoted performance of hierarchical NiCo2S4 nanotubes through electrospinning for supercapacitors
In this work, one-dimensional (1D) NiCo 2 S 4 nanotubes with sulfur vacancies (Vc-NiCo 2 S 4 ) were designed effectively via the electrostatic spinning and chemical bath deposition (CBD) process. As-spun polyacrylonitrile (PAN) nanofibers containing surfactant were taken as hard templates. Through t...
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Veröffentlicht in: | Journal of materials science 2021-05, Vol.56 (15), p.9368-9381 |
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Sprache: | eng |
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Zusammenfassung: | In this work, one-dimensional (1D) NiCo
2
S
4
nanotubes with sulfur vacancies (Vc-NiCo
2
S
4
) were designed effectively via the electrostatic spinning and chemical bath deposition (CBD) process. As-spun polyacrylonitrile (PAN) nanofibers containing surfactant were taken as hard templates. Through the in-situ growth and etching process, NiCo
2
S
4
nanotubes covered with a large number of nanosheets were generated. Sulfur vacancies were introduced by the following chemical reduction. The influence of defects was systematically discussed through structure analyses and electrochemical properties. As-obtained Vc-NiCo
2
S
4
not only maintains the original hierarchical nanotube characteristic, but also boost the electrochemical behaviors. Due to the defect treatment, Vc-NiCo
2
S
4
nanotubes have a higher specific capacity (1046 F g
−1
at a current density of 1 A g
−1
) and enhanced rate capability. A symmetrical supercapacitor (SSCs) device assembled by Vc-NiCo
2
S
4
nanotubes displays a high energy density of 31.8 Wh kg
−1
at the power density of 260 W kg
−1
. These results indicate that the construction of 1D hierarchical nanotubes and sulfur vacancies could provide effective strategy to promote the performance of supercapacitors.
Graphical abstract
1D NiCo
2
S
4
hierarchical nanotubes were prepared by employing PAN nanofibers as sacrificial templates. The Vc-NiCo
2
S
4
nanotubes after NaBH
4
reduction maintain the original morphology and optimize the electrochemical activities. Vc-NiCo
2
S
4
with sulfur vacancies exhibits enhanced electrochemical performance. |
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ISSN: | 0022-2461 1573-4803 |
DOI: | 10.1007/s10853-021-05874-6 |