50.2: Invited Paper: Characterization of Co‐Fabricated Silicon TFT and MEMS Shutter Display

50.2: Invited Paper: Characterization of Co‐Fabricated Silicon TFT and MEMS Shutter Display

Active matrix shutter type displays consisting of thin film transistors and pre‐stressed micro‐electro‐mechanical elements that were co‐fabricated in simple and robust four or five mask processes exhibit a unique combination of attractive features such as excellent optical characteristics, fast swit...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2021-02, Vol.52 (S1), p.333-336
Hauptverfasser: Fruehauf, Norbert, Al Nusayer, Sheikh Abdullah, Schalberger, Patrick, Baur, Holger, Jurgschat, Clemens
Format: Artikel
Sprache:eng
Schlagworte:
Active matrix
MEMS
Micro-electro-mechanical-systems
Operating temperature
Optical properties
Semiconductor devices
TFT
thin film transistor
Thin film transistors
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Beschreibung
Zusammenfassung:Active matrix shutter type displays consisting of thin film transistors and pre‐stressed micro‐electro‐mechanical elements that were co‐fabricated in simple and robust four or five mask processes exhibit a unique combination of attractive features such as excellent optical characteristics, fast switching time and outstanding operating temperature range.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.14484