Screw-Dislocation-Driven Bidirectional Spiral Growth of Bi2Se3 Nanoplates

Bi2Se3 attracts intensive attention as a typical thermoelectric material and a promising topological insulator material. However, previously reported Bi2Se3 nanostructures are limited to nanoribbons and smooth nanoplates. Herein, we report the synthesis of spiral Bi2Se3 nanoplates and their screw‐di...

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Veröffentlicht in:Angewandte Chemie International Edition 2014-06, Vol.53 (25), p.6425-6429
Hauptverfasser: Zhuang, Awei, Li, Jia-Jun, Wang, You-Cheng, Wen, Xin, Lin, Yue, Xiang, Bin, Wang, Xiaoping, Zeng, Jie
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Sprache:eng
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Zusammenfassung:Bi2Se3 attracts intensive attention as a typical thermoelectric material and a promising topological insulator material. However, previously reported Bi2Se3 nanostructures are limited to nanoribbons and smooth nanoplates. Herein, we report the synthesis of spiral Bi2Se3 nanoplates and their screw‐dislocation‐driven (SDD) bidirectional growth process. Typical products showed a bipyramid‐like shape with two sets of centrosymmetric helical fringes on the top and bottom faces. Other evidence for the unique structure and growth mode include herringbone contours, spiral arms, and hollow cores. Through the manipulation of kinetic factors, including the precursor concentration, the pH value, and the amount of reductant, we were able to tune the supersaturation in the regime of SDD to layer‐by‐layer growth. Nanoplates with preliminary dislocations were discovered in samples with an appropriate supersaturation value and employed for investigation of the SDD growth process. Interesting faces with chiseled features: No longer limited to nanoribbons and smooth nanoplates, Bi2Se3 nanostructures in the form of spiral‐type nanoplates with a bipyramid‐like shape characterized by two sets of centrosymmetric helical fringes on the top and bottom faces were formed by a bidirectional growth process. Other evidence for the unique structure and growth mode include herringbone contours, spiral arms, and hollow cores (see picture).
ISSN:1433-7851
1521-3773
DOI:10.1002/anie.201403530