Bi-stable magnetoelectric data flip-flop triggered by magnetic field

A magnetoelectric (ME) D-FF device in composite of Ni-Zn ferrite/PZT/ Ni-Zn ferrite symmetrical laminate with coil wound around it has been presented. Taking advantage of remnant magnetization effect and ME coupling mediated by strain controlled by bias magnetic field, non-volatile ME voltage of + 60.3 mV and − 59.4 mV can be clearly observed at the EMR of 58 kHz in absence of H DC . Moreover, two types of ME voltages between + 234.4 mV and − 233 mV are switched due to the magneto-mechanic strain variation, when H DC jumps from + 38 Oe to − 38 Oe, or vice versa. The functions of logic “tracking” and “holding”, O n+1 = D 1 or O n+1 = O n , are observed at running time. These findings provide great possibilities of the D-FF (counter) based on ME composite applied in proximity readers, to effectively avoid the issues of the high consumption due to using conventional D-FF/counter.