Growth of Ge Nanowires by Chemical Vapor Deposition at Atmospheric Pressure Using Readily Available Precursors GeO2 and C2H5OH

The aim of the present study is to investigate chemical vapor deposition of Ge nanowires from readily available precursors solid GeO 2 and liquid ethanol (C 2 H 5 OH) at atmospheric pressure. Gaseous GeO was generated in situ by the reactions between the reactants in the source temperature range from 1000 K to 1200 K. Ge wires were grown from the gaseous species transported from the source to the Au-coated Si substrate heated to 723 K for 5 min and 15 min. The diameter of the Ge wires slightly increased with increasing source temperature for the growth time of 5 min. The mean diameter (~ 220 nm) of the wires grown from the species generated at 1200 K for 15 min was greater than those of the other samples (range ~ 120 nm to 145 nm) owing to excessive Ge deposition on previously formed Ge wires. The growth of the Ge nanowires is discussed in terms of the vapor–liquid–solid mechanism and the reduction reactions between the species derived from the precursors.