A Crash Recovery Scheme for a Hybrid Mapping FTL in NAND Flash Storage Devices
An FTL (flash translation layer), which most flash storage devices are equipped with, needs to guarantee the consistency of modified metadata from a sudden power failure. This crash recovery scheme significantly affects the writing performance of a flash storage device during its normal operation, a...
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Veröffentlicht in: | Electronics (Basel) 2021-02, Vol.10 (3), p.327 |
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Sprache: | eng |
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Zusammenfassung: | An FTL (flash translation layer), which most flash storage devices are equipped with, needs to guarantee the consistency of modified metadata from a sudden power failure. This crash recovery scheme significantly affects the writing performance of a flash storage device during its normal operation, as well as its reliability and recovery performance; therefore, it is desirable to make the crash recovery scheme efficient. Despite the practical importance of a crash recovery scheme in an FTL, few works exist that deal with the crash recovery issue in FTL in a comprehensive manner. This study proposed a novel crash recovery scheme called FastCheck for a hybrid mapping FTL called Fully Associative Sector Translation (FAST). FastCheck can efficiently secure the newly generated address-mapping information using periodic checkpoints, and at the same time, leverages the characteristics of an FAST FTL, where the log blocks in a log area are used in a round-robin way. Thus, it provides two major advantages over the existing FTL recovery schemes: one is having a low logging overhead during normal operations in the FTL and the other to have a fast recovery time in an environment where the log provisioning rate is relatively high, e.g., over 20%, and the flash memory capacity is very large, e.g., 32 GB or 64 GB. |
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ISSN: | 2079-9292 2079-9292 |
DOI: | 10.3390/electronics10030327 |