Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma

The silicon oxide thin films obtained by thermal SiO 2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal SiO 2 , the...

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Veröffentlicht in:Journal of experimental and theoretical physics 2020-12, Vol.131 (6), p.940-944
Hauptverfasser: Perevalov, T. V., Iskhakzai, R. M. Kh, Aliev, V. Sh, Gritsenko, V. A., Prosvirin, I. P.
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Sprache:eng
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