Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma

The silicon oxide thin films obtained by thermal SiO 2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal SiO 2 , the...

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Veröffentlicht in:	Journal of experimental and theoretical physics 2020-12, Vol.131 (6), p.940-944
Hauptverfasser:	Perevalov, T. V., Iskhakzai, R. M. Kh, Aliev, V. Sh, Gritsenko, V. A., Prosvirin, I. P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic structure Classical and Quantum Gravitation Cyclotron resonance Depletion Electron cyclotron resonance Electronic structure Elementary Particles First principles Heat treatment Hydrogen plasma Oxide coatings Parameter estimation Particle and Nuclear Physics Photoelectrons Physics Physics and Astronomy Plasma Quantum Field Theory Relativity Theory Silicon dioxide Silicon oxides Solid State Physics Solids and Liquids Spectrum analysis Thin films Valence band
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Zusammenfassung:	The silicon oxide thin films obtained by thermal SiO 2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a significant oxygen depletion of thermal SiO 2 , the more so the longer the treatment time. The atomic structure of the SiO x
ISSN:	1063-7761 1090-6509
DOI:	10.1134/S1063776120110084